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參數(shù)資料
| 型號： | AP9920GEO |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | 4900 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, TSSOP-8 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 116K |
| 代理商： | AP9920GEO |
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
AP9920GEO
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
I
D
(
T
A
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
N
t
)
P
DM
Duty Factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=208
o
C/W
t
T
0.02
0.05
0.1
0.2
Duty factor = 0.5
Single Pulse
0.01
0
3
6
9
12
0
5
10
15
20
25
Q
G
, Total Gate Charge (nC)
V
G
I
D
= 4A
V
DS
=15V
V
DS
=20V
V
DS
=25V
10
100
1000
1
5
9
13
17
21
25
29
V
DS
, Drain-to-Source Voltage (V)
C
f=1.0MHz
C
iss
C
oss
C
rss
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
0
5
10
15
20
0
1
2
3
V
GS
, Gate-to-Source Voltage (V)
I
D
T
j
=150
o
C
T
j
=25
o
C
V
DS
=5V
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