參數(shù)資料
型號(hào): AP9922EO
廠商: ADVANCED POWER ELECTRONICS CORP
英文描述: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: N溝道增強(qiáng)型功率MOSFET
文件頁數(shù): 1/4頁
文件大小: 103K
代理商: AP9922EO
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low on-resistance
BV
DSS
R
DS(ON)
I
D
20V
15m
Ω
6.8A
Capable of 2.5V gate drive
Optimal DC/DC battery application
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
GS
I
D
@T
A
=25
I
D
@T
A
=70
I
DM
P
D
@T
A
=25
V
V
A
A
A
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
125
/W
Data and specifications subject to change without notice
200615052
AP9922EO
Parameter
Rating
Drain-Source Voltage
20
Gate-Source Voltage
Drain Current
3
, V
GS
@ 4.5V
Drain Current
3
, V
GS
@ 4.5V
Pulsed Drain Current
1
±12
6.8
5.4
25
Total Power Dissipation
1
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
Storage Temperature Range
0.008
Thermal Data
Parameter
S1
G1
D1
S2
G2
D2
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D2S2
S2
G2
D1
S1
S1
G1
TSSOP-8
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