參數(shù)資料
型號: AP9920GEO
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: 小信號晶體管
英文描述: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: 4900 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: ROHS COMPLIANT, TSSOP-8
文件頁數(shù): 3/4頁
文件大小: 116K
代理商: AP9920GEO
AP9920GEO
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
10
50
90
130
170
210
1
2
3
4
5
V
GS
, Gate-to-Source Voltage (V)
R
D
)
I
D
= 2A
T
A
=25
o
C
0
10
20
30
0
2
4
6
V
DS
, Drain-to-Source Voltage (V)
I
D
T
A
=25
o
C
5.0 V
4.5V
3.5V
2.5V
V
G
=1.5V
0
10
20
30
0
2
4
6
V
DS
, Drain-to-Source Voltage (V)
I
D
T
A
=150
o
C
5.0 V
4.5V
3.5V
2.5V
V
G
=1.5V
0.3
0.7
1.1
1.5
1.9
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
D
I
D
= 4A
V
G
= 4.5V
0
0.5
1
1.5
2
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
G
0
1
2
3
4
0
0.2
0.4
0.6
0.8
V
SD
, Source-to-Drain Voltage (V)
I
S
(
T
j
=25
o
C
T
j
=150
o
C
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