- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375353 > AP9920GEO (ADVANCED POWER ELECTRONICS CORP) N-CHANNEL ENHANCEMENT MODE POWER MOSFET PDF資料下載
參數(shù)資料
| 型號： | AP9920GEO |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | 4900 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, TSSOP-8 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 116K |
| 代理商： | AP9920GEO |
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
V
GS
=0V, I
D
=250uA
30
-
-
V
R
DS(ON)
V
GS
=4.5V, I
D
=4A
-
-
27
m
Ω
V
GS
=4V, I
D
=4A
-
-
28
m
Ω
V
GS
=2.5V, I
D
=2A
V
DS
=V
GS
, I
D
=250uA
V
DS
=5V, I
D
=4A
-
-
36
m
Ω
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
0.3
-
1
V
Forward Transconductance
-
13
-
S
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=30V, V
GS
=0V
V
DS
=24V ,V
GS
=0V
V
GS
=±10V
I
D
=4A
V
DS
=25V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=3.3
Ω
,
V
GS
=5V
-
-
1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
-
-
25
uA
I
GSS
Gate-Source Leakage
Total Gate Charge
2
-
-
±30
uA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
-
11
18
nC
Gate-Source Charge
-
1
-
nC
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
-
4
-
nC
-
8
-
ns
Rise Time
-
10
-
ns
Turn-off Delay Time
-
23
-
ns
t
f
C
iss
C
oss
C
rss
R
g
Fall Time
R
D
=15
Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
-
7
-
ns
Input Capacitance
-
590
950
pF
Output Capacitance
-
110
-
pF
Reverse Transfer Capacitance
-
85
-
pF
Gate Resistance
f=1.0MHz
-
2.2
3.3
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
SD
t
rr
Q
rr
Forward On Voltage
2
Reverse Recovery Time
2
I
S
=0.8A, V
GS
=0V
I
S
=4A,
V
GS
=0
V
,
dI/dt=100A/μs
-
-
1.3
V
-
27
-
ns
Reverse Recovery Charge
-
17
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of
FR4 board ; 208
℃
/W when mounted on Min. copper pad.
2/4
AP9920GEO
相關PDF資料 |
PDF描述 |
|---|---|
| AP9922EO | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9926EM-A | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9926GEM | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9926GO | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9926M | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP9920X | 制造商:Schneider Electric 功能描述:BATTERY MANAGEMENT MASTER - Bulk |
| AP9920XR | 制造商:Schneider Electric 功能描述:BATTERY MANAGEMENT SYSTEM F - Bulk |
| AP9920XR-2 | 制造商:Schneider Electric 功能描述:BATTERY MANAGEMENT SYSTEM F - Bulk |
| AP9920XS | 制造商:American Power Conversion Corp (APC by Schneider Electric) 功能描述:APC BATTERY MANAGEMENT SYSTEM 制造商:Schneider Electric 功能描述:APC BATTERY MANAGEMENT SYST - Bulk |
| AP9921X | 制造商:American Power Conversion Corp (APC by Schneider Electric) 功能描述:APC BATTERY MANAGEMENT SYSTEM 制造商:Schneider Electric 功能描述:APC BATTERY MANAGEMENT SYSTEM - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復。