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參數(shù)資料
| 型號： | AP9920GEO |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | 4900 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, TSSOP-8 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 116K |
| 代理商： | AP9920GEO |
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼
Low on-resistance
Capable of 2.5V gate drive
Optimal DC/DC battery application
RoHS compliant
BV
DSS
R
DS(ON)
I
D
30V
28m
Ω
4.9A
▼
▼
▼
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
GS
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
V
V
A
A
I
DM
P
D
@T
A
=25
℃
A
W
W/
℃
T
STG
T
J
℃
℃
Symbol
Value
125
Unit
℃
/W
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
Data and specifications subject to change without notice
201103051-1/4
AP9920GEO
Pb Free Plating Product
Parameter
Rating
Drain-Source Voltage
30
Gate-Source Voltage
Drain Current
3
, V
GS
@ 4.5V
Drain Current
3
, V
GS
@ 4.5V
Pulsed Drain Current
1
±10
4.9
3.9
20
Total Power Dissipation
1
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.008
Thermal Data
Parameter
Storage Temperature Range
S1
G1
D1
S2
G2
D2
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D2S2
S2
G2
D1
S1
S1G1
TSSOP-8
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