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參數(shù)資料
| 型號(hào)： | AON5802 |
| 廠商： | ALPHA |
| 英文描述： | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 常見的漏雙N溝道增強(qiáng)型場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 3285K |
| 代理商： | AON5802 |
AON5802
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
30
V
1
5
10
T
J
=55°C
I
GSS
BV
GSO
V
GS(th)
I
D(ON)
μ
A
±12
0.6
30
V
V
A
1
1.5
14
23
17
18
20
23
37
0.76
17
28
20
22
24
30
T
J
=125°C
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
S
V
A
0.5
0.9
4.5
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
869
129
104
1.5
pF
pF
pF
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
10.7
2.1
4.3
3.4
11.2
27.2
6.7
nC
nC
nC
ns
ns
ns
ns
24.6
12.9
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=8A, dI/dt=100A/
μ
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
μ
A, V
GS
=0V
V
DS
=24V, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=8A
Reverse Transfer Capacitance
Gate resistance
I
F
=8A, dI/dt=100A/
μ
s
V
GS
=0V, V
DS
=15V, f=1MHz
Gate-Source Breakdown Voltage
Gate Threshold Voltage
I
DSS
μ
A
V
DS
=V
GS
,
I
D
=250
μ
A
V
DS
=0V, I
G
=±250uA
V
DS
=0V, V
GS
=±10V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=8A
V
GS
=4.5V, I
D
=6A
V
GS
=4.0V, I
D
=4A
V
GS
=3.1V, I
D
=4A
V
GS
=2.5V, I
D
=3A
m
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
V
GS
=4.5V, V
DS
=15V, I
D
=8A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Total Gate Charge
Input Capacitance
Output Capacitance
V
GS
=10V, V
DS
=15V, R
L
=1.25
,
R
GEN
=3
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
Rev2: June 2005
Alpha & Omega Semiconductor, Ltd.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AON5802_07 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
| AON5802A | 功能描述:MOSFET DUAL N-CH 30V 7.2A 6-DFN RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| AON5802ALS | 功能描述:MOSFET N-CH DUAL DFN 制造商:alpha & omega semiconductor inc. 系列:* 包裝:帶卷（TR） 零件狀態(tài):停產(chǎn) 安裝類型:表面貼裝 封裝/外殼:6-SMD，扁平引線裸焊盤 供應(yīng)商器件封裝:6-DFN-EP（2x5） 標(biāo)準(zhǔn)包裝:3,000 |
| AON5802B | 功能描述:MOSFET N-CH 30V 7.2A DFN2X5 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| AON5802B_101 | 功能描述:MOSFET N-CH DUAL DFN 制造商:alpha & omega semiconductor inc. 系列:* 包裝:帶卷（TR） 零件狀態(tài):停產(chǎn) 安裝類型:表面貼裝 封裝/外殼:6-SMD，扁平引線裸焊盤 供應(yīng)商器件封裝:6-DFN-EP（2x5） 標(biāo)準(zhǔn)包裝:3,000 |
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