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參數(shù)資料
| 型號： | AON3814 |
| 廠商： | ALPHA |
| 英文描述： | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 常見的漏雙N溝道增強型場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 129K |
| 代理商： | AON3814 |
AON3814
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
20
V
1
5
T
J
=55°C
I
GSS
BV
GSO
V
GS(th)
I
D(ON)
10
μ
A
±12
0.4
30
11
15
11.5
14.5
23
V
V
A
0.71
1.1
14
19
15
19
30
25
0.75
17
24
18.5
24
39
T
J
=125°C
m
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
S
V
A
1
3.5
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
1315
219
183
2.1
pF
pF
pF
k
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
13.1
6.7
4.6
1
2.8
5.6
5.9
nC
nC
nC
μ
s
μ
s
μ
s
μ
s
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Gate-Source Breakdown Voltage
Gate Threshold Voltage
On state drain current
V
DS
=0V, I
G
=±250
μ
A
V
DS
=V
GS
I
D
=250
μ
A
V
GS
=4.5V, V
DS
=5V
V
GS
=2.5V, I
D
=6A
V
GS
=1.8V, I
D
=6A
V
DS
=5V, I
D
=6A
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=0V, V
DS
=10V, f=1MHz
Gate Drain Charge
V
GS
=5V, V
DS
=10V, R
L
=1.7
,
R
GEN
=3
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=4.5V, V
DS
=10V, I
D
=6A
m
I
S
=1A,V
GS
=0V
V
GS
=4V, I
D
=6A
V
GS
=4.5V, I
D
=6A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
DSS
μ
A
I
D
=250
μ
A, V
GS
=0V
V
DS
=20V, V
GS
=0V
Zero Gate Voltage Drain Current
V
DS
=0V, V
GS
=±10V
Gate-Body leakage current
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
T
A
=25°C. The SOA curve provides a single pulse rating.
F. The power dissipation and current rating is based on the t
≤
10s thermal resistance, and current rating is also limited by wire-bonding.
Rev 2:Sep 2007
2
FR-4 board with 2oz. Copper, in a still air environment with
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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| AON3816 | 功能描述:MOSFET DUAL N-CH 20V 4A 8-DFN RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
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| AON3816_101 | 功能描述:MOSFET 2N-CH 20V 4A 8-DFN 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):過期 FET 類型:2 N 溝道（雙）共漏 FET 功能:邏輯電平門 漏源極電壓（Vdss）:20V 電流 - 連續(xù)漏極（Id）（25°C 時）:- 不同?Id，Vgs 時的?Rds On（最大值）:22 毫歐 @ 4A，4.5V 不同 Id 時的 Vgs（th）（最大值）:1.1V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:13nC @ 4.5V 不同 Vds 時的輸入電容（Ciss）:1100pF @ 10V 功率 - 最大值:2.5W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:8-SMD，扁平引線 供應(yīng)商器件封裝:8-DFN（3x3） 標(biāo)準(zhǔn)包裝:1 |
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