參數(shù)資料
型號: AON3402
廠商: ALPHA
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: N溝道增強(qiáng)型場效應(yīng)管
文件頁數(shù): 1/4頁
文件大小: 139K
代理商: AON3402
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
32
65
25
Max
42
100
35
R
θ
JL
W
Maximum Junction-to-Lead
C
Steady-State
°C/W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
10s
Steady-State
R
θ
JA
±12
12
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
Drain-Source Voltage
20
Maximum
Units
V
V
Parameter
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
9.6
40
3
1.9
Power Dissipation
A
T
A
=25°C
T
A
=70°C
Junction and Storage Temperature Range
A
P
D
°C
-55 to 150
I
D
AON3402
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 20V
I
D
= 12A (V
GS
= 4.5V)
R
DS(ON)
< 13m
(V
GS
= 4.5V)
R
DS(ON)
< 17m
(V
GS
= 2.5V)
R
DS(ON)
< 26m
(V
GS
= 1.8V)
ESD Rating: 2000V HBM
General Description
The AON3402 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V V
GS(MAX)
rating. It is ESD protected.
This device is suitable for use as a uni-directional or
bi-directional load switch, facilitated by its common-
drain configuration.
Standard Product AON3402 is
Pb-free (meets ROHS & Sony 259 specifications).
AON3402L is a Green Product ordering option.
AON3402 and AON3402L are electrically identical.
G
D
S
DFN 3x3
Top View Bottom View
GSSS
DD
DD
G
S
S
S
D
D
D
D
Alpha & Omega Semiconductor, Ltd.
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