參數(shù)資料
型號(hào)： AON3806
廠商： ALPHA
英文描述： Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
中文描述： 常見(jiàn)的漏雙N溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 137K
代理商： AON3806
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
43
77
36
Max
56
110
50
R
θ
JL
W
Maximum Junction-to-Lead
C
Steady-State
°C/W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
≤
10s
Steady-State
R
θ
JA
±12
7.3
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
Drain-Source Voltage
20
Maximum
Units
V
V
Parameter
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
5.8
30
2.2
1.4
Power Dissipation
A
T
A
=25°C
T
A
=70°C
Junction and Storage Temperature Range
A
P
D
°C
-55 to 150
I
D
AON3806
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
Features
V
DS
(V) = 20V
I
D
= 7.3 A (V
GS
= 10V)
R
DS(ON)
< 26m
(V
GS
= 4.5V)
R
DS(ON)
< 27m
(V
GS
= 4V)
R
DS(ON)
< 32m
(V
GS
= 2.5V)
ESD Rating: 2500V HBM
DFN 3x3
Top View Bottom View
G1
D1
S1
G2
D2
S2
General Description
The AON3806 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V V
GS(MAX)
rating. It is ESD protected.
This device is suitable for use as a uni-directional or
bi-directional load switch, facilitated by its common-
drain configuration.
Standard Product AON3806is Pb-
free (meets ROHS & Sony 259 specifications).
AON3806L is a Green Product ordering option.
AON3806 and AON3806L are electrically identical.
G1
S1
G2
S2
D1
D1
D2
D2
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料
PDF描述
AON3812 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AON3814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AON3816 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AON4413 P-Channel Enhancement Mode Field Effect Transistor
AON4602 Complementary Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AON3806_12 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:20V Dual N-Channel MOSFET
AON3810 功能描述:MOSFET DUAL N-CH 20V 7A 8-DFN RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁(yè)面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
AON3812 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AON3814 功能描述:MOSFET N-CH 20V 6A DFN3X3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
AON3814_10 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:20V N-Channel MOSFET
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