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參數(shù)資料
| 型號： | AOD409L |
| 廠商： | ALPHA |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 的P -溝道增強型場效應晶體管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 185K |
| 代理商： | AOD409L |
AOD409
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
-60
V
-0.003
-1
-5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
±100
-2.4
nA
V
A
-1.2
-60
-1.9
32
53
43
32
40
T
J
=125°C
55
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
S
V
A
-0.73
-1
-30
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
2977
241
153
2
3600
pF
pF
pF
2.4
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
44
22.2
9
10
12
14.5
38
15
40
59
54
28
nC
nC
nC
nC
ns
ns
ns
ns
50
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=0V, V
DS
=-30V, f=1MHz
Gate Drain Charge
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
V
GS
=-10V, V
DS
=-30V, I
D
=-20A
V
GS
=-10V, V
DS
=-30V, R
L
=1.5
,
R
GEN
=3
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
m
V
GS
=-4.5V, I
D
=-20A
V
DS
=-5V, I
D
=-20A
I
S
=-1A,V
GS
=0V
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
μ
A
Gate Threshold Voltage
On state drain current
V
DS
=V
GS
I
D
=-250
μ
A
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-20A
V
DS
=-48V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-20A, dI/dt=100A/
μ
s
I
D
=-250
μ
A, V
GS
=0V
I
F
=-20A, dI/dt=100A/
μ
s
A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 3: June 2005
Alpha & Omega Semiconductor, Ltd.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AOD410 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AOD4100 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AOD4102 | 功能描述:MOSFET N-CH 30V 19A TO-252 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| AOD4102_10 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V N-Channel MOSFET |
| AOD4102L | 功能描述:MOSFET N-CH TO252 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):停產(chǎn) FET 類型:N 溝道 技術(shù):MOSFET（金屬氧化物） 漏源電壓（Vdss）:30V 電流 - 連續(xù)漏極（Id）（25°C 時）:8A（Ta），19A（Tc） 驅(qū)動電壓（最大 Rds On，最小 Rds On）:4.5V，10V 不同 Id 時的 Vgs（th）（最大值）:3V @ 250μA 不同 Vgs 時的柵極電荷?（Qg）（最大值）:8.1nC @ 10V Vgs（最大值）:±20V 不同 Vds 時的輸入電容（Ciss）（最大值）:432pF @ 15V FET 功能:- 功率耗散（最大值）:4.2W（Ta），21W（Tc） 不同?Id，Vgs 時的?Rds On（最大值）:37 毫歐 @ 12A，10V 工作溫度:-55°C ~ 175°C（TJ） 安裝類型:表面貼裝 供應商器件封裝:TO-252，（D-Pak） 封裝/外殼:TO-252-3，DPak（2 引線 + 接片），SC-63 標準包裝:2,500 |
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