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參數(shù)資料
| 型號： | AOD4112 |
| 廠商： | ALPHA |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強(qiáng)型場效應(yīng)管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 123K |
| 代理商： | AOD4112 |
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
18
44
2.4
Max
22
55
3
R
θ
JC
5.7
3.6
W
T
A
=70°C
W
Junction and Storage Temperature Range
A
P
D
°C
50
25
-55 to 175
T
C
=100°C
T
A
=25°C
I
D
Continuous Drain
Current
GF
Pulsed Drain Current
C
Maximum
30
±20
Units
V
V
Parameter
Drain-Source Voltage
T
C
=25°C
T
C
=100°C
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
B
Steady-State
Steady-State
20
20
80
25
94
Avalanche Current
C
Repetitive avalanche energy L=0.3mH
C
Power Dissipation
A
P
DSM
°C/W
°C/W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Power Dissipation
B
T
C
=25°C
Gate-Source Voltage
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Units
°C/W
t
≤
10s
R
θ
JA
A
mJ
AOD4112
N-Channel Enhancement Mode Field Effect Transistor
SRFET
TM
Features
V
DS
(V) = 30V
I
D
= 20A (V
GS
= 10V)
R
DS(ON)
< 9.5m
(V
GS
= 10V)
R
DS(ON)
< 14.5m
(V
GS
= 4.5V)
UIS Tested!
Rg,Ciss,Coss,Crss Tested!
General Description
SRFETTM The AOD4112 uses advanced trench
technology with a monolithically integrated Schottky
diode to provide excellent R
DS(ON)
,and low gate charge.
This device is suitable for use as a low side FET in
SMPS, load switching and general purpose
applications.
Standard Product AOD4112 is Pb-free
(meets ROHS & Sony 259 specifications).
G D S
TO-252
D-PAK
Top View
Drain Connected to
Tab
D
S
G
S
oft
R
FET
:
Integrated Schottky Diode
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| AOD411N-B | 制造商:IDEC CORPORATION 功能描述:TWTD JUMBO MUSHRM PB |
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| AOD411N-R | 制造商:IDEC CORPORATION 功能描述:Switch Push Button N.O./N.C. DPST Round Mushroom Button 10A 440VAC 220VDC Maintained Contact Screw Panel Mount |
| AOD411N-R-ENGRAVED | 制造商:IDEC CORPORATION 功能描述:AOD411N-R-ENGRAVED |
| AOD411N-Y | 制造商:IDEC CORPORATION 功能描述:TWTD JUMBO MUSHRM PB |
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