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參數(shù)資料
| 型號： | AO6601L |
| 廠商： | ALPHA |
| 英文描述： | Complementary Enhancement Mode Field Effect Transistor |
| 中文描述： | 增強(qiáng)模式互補(bǔ)場效應(yīng)晶體管 |
| 文件頁數(shù)： | 6/7頁 |
| 文件大?。?/td> | 211K |
| 代理商： | AO6601L |
AO6601
, AO6601L
P-CHANNEL:
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
-
D
V
GS
=-3.5V
-2.5V
-2V
-4.5V
-10V
0
2
4
6
8
10
0
0.5
1
1.5
2
2.5
3
3.5
4
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-
D
(
50
75
100
125
150
175
200
225
250
0
1
2
3
4
5
6
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
D
)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-
S
25°C
125°C
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
N
V
GS
=-4.5V, V
GS
=-10V
V
GS
=-2.5V
0
50
100
150
200
250
300
350
0
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
D
)
25°C
125°C
V
DS
=-5V
V
GS
=-4.5V
V
GS
=-10V
I
D
=-2A
25°C
125°C
I
D
=-2A
-4V
V
GS
=-2.5V
-5V
-3V
Alpha and Omega Semiconductor, Ltd.
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| AO6602L | 功能描述:MOSFET N/P-CH COMPL 30V 6-TSOP RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| AO6603 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
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