- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375335 > AO6601L (ALPHA) Complementary Enhancement Mode Field Effect Transistor PDF資料下載
參數(shù)資料
| 型號(hào)： | AO6601L |
| 廠商： | ALPHA |
| 英文描述： | Complementary Enhancement Mode Field Effect Transistor |
| 中文描述： | 增強(qiáng)模式互補(bǔ)場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 211K |
| 代理商： | AO6601L |
AO6601 n-channel typical characteristics
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0
1
2
3
4
5
6
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
G
0
100
200
300
400
500
600
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
C
iss
0
0.001
5
10
15
20
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
P
0.01
0.00001
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
θ
J
T
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
μ
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
A
=25°C
10
μ
s
V
DS
=15V
I
D
=3.4A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=110°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150°C
T
A
=25°C
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AO6602 | Complementary Enhancement Mode Field Effect Transistor |
| AO6602L | Complementary Enhancement Mode Field Effect Transistor |
| AO6603 | Complementary Enhancement Mode Field Effect Transistor |
| AO6603L | Complementary Enhancement Mode Field Effect Transistor |
| AO6605 | Complementary Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO6602 | 制造商:Alpha & Omega Semiconductor 功能描述:Trans MOSFET N/P-CH 30V 3.5A/2.7A 6-Pin TSOP T/R 制造商:Alpha & Omega Semiconductor 功能描述:MOSFET N/P-CH COMPL 30V 6-TSOP |
| AO6602_11 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V Complementary MOSFET |
| AO6602L | 功能描述:MOSFET N/P-CH COMPL 30V 6-TSOP RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁(yè)面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| AO6603 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AO6603L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。