- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375334 > AO4918L (ALPHA) Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor PDF資料下載
參數(shù)資料
| 型號： | AO4918L |
| 廠商： | ALPHA |
| 英文描述： | Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 非對稱雙N溝道增強型場效應(yīng)晶體管 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 156K |
| 代理商： | AO4918L |
AO4918
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
30
V
0.007
0.05
3.2
12
10
20
100
2
I
GSS
V
GS(th)
I
D(ON)
nA
V
A
0.6
40
1.1
11.7
15.4
13.1
37
0.46
14.5
19
16
T
J
=125°C
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance (FET + Schottky)
Reverse Transfer Capacitance
30
S
V
A
0.5
3.5
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
3740
295
186
0.86
4488
pF
pF
pF
1.1
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
30.5
4.5
8.5
6
8.2
54.5
10.5
23.5
13.3
37
nC
nC
nC
ns
ns
ns
ns
ns
nC
9
12
75
15
28
16
Body Diode + Schottky Reverse Recovery Time
Body Diode + Schottky Reverse Recovery Charge
I
F
=9.3A, dI/dt=100A/
μ
s
I
F
=9.3A, dI/dt=100A/
μ
s
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=10V, V
DS
=15V, R
L
=1.6
,
R
GEN
=3
V
GS
=4.5V, V
DS
=15V, I
D
=9.3A
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Forward Transconductance
Diode+Schottky Forward Voltage
Maximum Body-Diode+Schottky Continuous Current
V
DS
=5V, I
D
=9.3A
I
S
=1A
V
GS
=0V, V
DS
=15V, f=1MHz
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=9.3A
m
V
GS
=4.5V, I
D
=8.8A
Gate Threshold Voltage
On state drain current
V
DS
=V
GS
I
D
=250
μ
A
V
GS
=4.5V, V
DS
=5V
mA
Gate-Body leakage current
V
DS
=0V, V
GS
= ±12V
V
R
=30V, T
J
=125°C
V
R
=30V, T
J
=150°C
Drain-Source Breakdown Voltage
I
D
=250
μ
A, V
GS
=0V
V
R
=30V
I
DSS
Zero Gate Voltage Drain Current.
(Set by Schottky leakage)
Q1 Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value in any
given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA curve
provides a single pulse rating.
F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance
and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately
Rev4: August 2005
.
Alpha Omega Semiconductor, Ltd.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AO4922 | Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4924 | Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4932 | Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4944 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4F800 | Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO4922 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4922_11 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Asymmetric Dual N-Channel MOSFET |
| AO4924 | 功能描述:MOS N CH DUAL 30V 9A 7.3A SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:SRFET™ 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| AO4924_11 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Asymmetric Dual N-Channel MOSFET |
| AO4924L | 功能描述:MOSFET 2N-CH 30V 9A/7.3A 8SOIC 制造商:alpha & omega semiconductor inc. 系列:SRFET?? 包裝:帶卷（TR） 零件狀態(tài):過期 FET 類型:2 個 N 溝道（雙） FET 功能:邏輯電平門 漏源極電壓（Vdss）:30V 電流 - 連續(xù)漏極（Id）（25°C 時）:- 不同?Id，Vgs 時的?Rds On（最大值）:15.8 毫歐 @ 9A，10V 不同 Id 時的 Vgs（th）（最大值）:2.4V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:31nC @ 10V 不同 Vds 時的輸入電容（Ciss）:1885pF @ 15V 功率 - 最大值:2W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商器件封裝:8-SO 標(biāo)準(zhǔn)包裝:1 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。