參數(shù)資料
型號： AO4707
廠商： ALPHA
英文描述： P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
中文描述： P通道增強模式場的肖特基二極管晶體管
文件頁數(shù)： 2/5頁
文件大?。?/td> 198K
代理商： AO4707
AO4707
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
-30
V
-1
-5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
±100
-2.4
nA
V
A
-1.2
40
-2
24.5
33
41
14.5
-0.76
33
T
J
=125°C
56
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
S
V
A
-1
-4.2
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
920
190
122
3.6
pF
pF
pF
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
SCHOTTKY PARAMETERS
V
F
Forward Voltage Drop
18.4
9.3
2.7
4.9
7.1
3.4
18.9
8.4
21.5
12.5
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
0.48
0.07
0.52
0.15
V
4.2
15
120
20
60
C
T
pF
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=0V, V
DS
=-15V, f=1MHz
Gate Drain Charge
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
V
GS
=-10V, V
DS
=-15V, I
D
=-8A
V
GS
=-10V, V
DS
=-15V, R
L
=1.8
,
R
GEN
=3
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
m
V
GS
=-4.5V, I
D
=-5A
V
DS
=-5V, I
D
=-8A
I
S
=-1A,V
GS
=0V
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
μ
A
Gate Threshold Voltage
On state drain current
V
DS
=V
GS
I
D
=-250
μ
A
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-8A
V
DS
=-24V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-8A, dI/dt=100A/
μ
s
I
D
=-250
μ
A, V
GS
=0V
I
F
=-8A, dI/dt=100A/
μ
s
I
F
=3.0A
V
R
=24V
V
R
=24V, T
J
=125°C
V
R
=24V, T
J
=150°C
V
R
=15V
I
rm
Maximum reverse leakage current
mA
Junction Capacitance
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single pulse rating.
Rev4: August 2005
Alpha & Omega Semiconductor, Ltd.
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PDF描述
AO4708 N-Channel Enhancement Mode Field Effect Transistor
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