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| 型號： | AN504 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Video Crosspoint Switch Simplifies Large Matrix Designs |
| 中文描述： | 視頻交叉點(diǎn)開關(guān)簡化大型矩陣設(shè)計(jì) |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 161K |
| 代理商： | AN504 |
AN504
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
6-2
Document Number: 70610
05-Aug-99
C
GS1
R
DS1
C
GS3
C
GS2
R
DS2
C
GD4
I
S(on)
I
D(on)
Input
Output
Substrate (V–)
Logic
Control
C
GS4
R
DS4
R
S
V
IN
R
L
Q
Q
C
GS3
C
GS2
R
DS3
C
GD4
Output
Q
I
S(on)
I
D(on)
Substrate (V–)
Logic
Control
Input
Q
R
L
R
S
V
IN
C
GS4
C
GS1
Note: Individual drain-source capacitances not shown for clarity.
FIGURE 3.
On-State Model
FIGURE 4.
Off-State Model
Figures 3 and 4 show low-frequency models of an “on”
channel and an “off” channel, respectively. The models allow
us to visualize the effects of leakage, low-frequency
transmission loss, and analog overvoltage on the overall
circuit performance. The term “l(fā)ow-frequency” is used for the
models because they use single components to represent the
characteristics of the channel. In other words, components
distributed over an area of silicon are lumped together for
simplicity’s sake. An accurate high-frequency model of an “on”
channel demands a more complex RC network (more on this
later).
Leakage-Generated Offsets
Depending on the value of source and load impedances
connected to input and output, leakage-generated offset
voltages can be obtained using Ohms Law. In practice,
however, the DG884 will be used surrounded by fast linear
circuitry whose bias currents will be much higher than the
nanoampere leakage currents of the D/CMOS process. Thus,
offset voltages will be dominated by the external circuitry
around the crosspoint and not the DG884.
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