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參數(shù)資料
| 型號： | AM81719-030 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | RF & Microwave Transistors Telemetry Applications(用于遙測的RF和微波晶體管) |
| 中文描述： | 射頻 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 63K |
| 代理商： | AM81719-030 |
PRELIMINARY DATA
September 1992
TELEMETRY APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 SQ 2LFL (M147)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
28 W MIN. WITH 6.7 dB GAIN
DESCRIPTION
The AM81719-030 is a high power silicon NPN
bipolar transistor designed for Class C, CW com-
munications and telemetry applications in the 1.75
- 1.85 GHz frequency range.
An emitter site ballasted refractory/gold overlay
die geometry computerized automatic wirebonding
is employed to ensure long term reliability and
product consistency.
AM81719-030 is supplied in the industry-standard
AMPAC
hermetic metal/ceramic package.
PIN CONNECTION
BRANDING
81719-030
ORDER CODE
AM81719-030
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
P
DISS
I
C
V
CC
T
J
T
STG
Parameter
Value
67.3
2.67
28
Unit
W
A
V
°
C
°
C
Power Dissipation*
Device Current*
Collector-Supply Voltage*
Junction Temperature
Storage Temperature
200
65 to +200
R
TH(j-c)
Junction-Case Thermal Resistance*
2.6
°
C/W
*Appliesonlyto ratedRF amplifier operation
AM81719-030
1. Collector
2. Base
3. Emitter
4. Base
THERMAL DATA
1/4
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