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參數(shù)資料
| 型號： | AM82223-018 |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 133K |
| 代理商： | AM82223-018 |
053-7010 Rev - 9-2002
AM82223-018
DESCRIPTION:
The AM82223-018 is a common base NPN silicon bipolar transistor
designed for high gain and efficiency in telemetry applications in
the 2.2-2.3 GHz frequency range.
The AM82223-018 incorporates internal input and output
impedance matching structures along with a rugged, emitter-site
ballasted die geometry.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25
°
C)
Symbol
P
DISS
Power Dissipation
I
C
Device Current*
V
CC
Collector-Supply Voltage*
T
J
Junction Temperature
T
STG
Storage Temperature
Thermal Data
R
TH(J-C)
Junction-case Thermal Resistance
Parameter
Value
58.3
3.0
28
200
-65 to +200
Unit
W
A
V
°
C
°
C
3.0
°
C/W
Features
2.2 - 2.3 GHz
24 VOLTS
INPUT / OUTPUT MATCHING
P
OUT
= 18 W MINIMUM
G
P
= 6.5 dB GAIN MINIMUM
COMMON BASE CONFIGURATION
RF & MICROWAVE TRANSISTORS
TELEMETRY APPLICATIONS
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