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參數(shù)資料
| 型號(hào)： | AM82223-010 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | TELEMETRY APPLICATIONS RF & MICROWAVE TRANSISTORS |
| 中文描述： | 遙測(cè)系統(tǒng)，射頻 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 59K |
| 代理商： | AM82223-010 |
August 31, 1994
TELEMETRY APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .400 2NLFL (S042)
hermetically sealed
ORDER CODE
AM82223-010
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
∞
:1 VSWR CAPABILITY AT RATED
CONDITIONS
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
9 W MIN. WITH 6.5 dB GAIN
DESCRIPTION
The AM82223-010 is a common base, silicon
NPN bipolar transistor designed for high gain
and efficiency in the 2.2
2.3 GHz frequency
range.
Suitable for hi-rel aerospace telemetry applica-
tions, the AM82223-010 is provided in the indus-
try-standard AMPAC metal/ceramic hermetic
package and incorporates internal input and out-
put impedance matching structures along with a
rugged, emitter-site ballasted overlay die geome-
try.
AM82223-010 is capable of withstanding
∞
:1
load mismatch at any phase angle under full
rated operating conditions.
PIN CONNECTION
BRANDING
82223-10
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
P
DISS
I
C
V
CC
T
J
T
STG
Parameter
(T
C
≤
75C)
Value
28
Unit
W
Power Dissipation*
Device Current*
1.2
A
Collector-Supply Voltage*
Junction Temperature
26
200
V
°
C
°
C
Storage Temperature
65 to +200
R
TH(j-c)
Junction-Case Thermal Resistance
4.4
°
C/W
*Applies only to rated RF amplifier operation
NOTE:
Thermal Resistance determined by Infra-Red Scanning of Hot-Spot
Junction Temperature at rated RF operating conditions.
AM82223-010
1. Collector
2. Base
3. Emitter
4. Base
THERMAL DATA
1/3
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