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參數(shù)資料
| 型號： | AM81720-012 |
| 廠商： | 意法半導體 |
| 英文描述： | RF & Microwave Transistors Communications Applications(用于通信的RF和微波晶體管) |
| 中文描述： | 射頻 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 84K |
| 代理商： | AM81720-012 |
September 1992
COMMUNICATIONS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .400 2LFL (S036)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
RUGGIZED VSWR
∞
:1
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
12 W MIN. WITH 7.4 dB GAIN
DESCRIPTION
The AM81720-012 is designed specifically for Tele-
communications applications.
The device is capable of withstanding any mis-
match load condition at any phase angle (VSWR
∞
:1) under full rated conditions. The unit is an
overlay, emitter site ballasted, geometry utilizing
a refractory/gold metallization system.
The unique AMPAC devices are housed in Her-
metic Metal/Ceramic packages with internal
Input/Output matching structures.
PIN CONNECTION
BRANDING
81720-12
ORDER CODE
AM81720-012
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
Parameter
Value
Unit
P
DISS
I
C
V
CC
T
J
T
STG
Power Dissipation*
31.8
W
Device Current*
Collector-Supply Voltage*
1.47
24
A
V
°
C
°
C
Junction Temperature
Storage Temperature
200
65 to +200
R
TH(j-c)
Junction-Case Thermal Resistance
5.5
°
C/W
*Applies only to rated RF amplifier operation
NOTE:
Thermal Resistance determined by Infra-Red Scanning of Hot-Spot
Junction Temperature at rated RF operating conditions.
AM81720-012
1. Collector
2. Base
3. Emitter
4. Base
THERMAL DATA
1/4
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