參數(shù)資料
型號(hào): Am70PDL127CDH85IT
廠商: Advanced Micro Devices, Inc.
英文描述: 2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS
中文描述: 2 × 64兆位(8米× 16位)的CMOS 3.0伏特,只有頁(yè)面模式閃存數(shù)據(jù)存儲(chǔ)128兆位(8米× 16位)的CMOS
文件頁(yè)數(shù): 96/127頁(yè)
文件大?。?/td> 849K
代理商: AM70PDL127CDH85IT
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94
Am70PDL127CDH/Am70PDL129CDH
November 24, 2003
A D V A N C E I N F O R M A T I O N
Table 8.
Primary Vendor-Specific Extended Query
COMMAND DEFINITIONS
Writing specific address and data commands or se-
quences into the command register initiates device op-
erations. Tables
10
and
11
define the valid register
command sequences. Writing
incorrect
address and
data values
or writing them in the
improper se-
quence
may place the device in an unknown state. A
reset command is then required to return the device to
reading array data.
All addresses are latched on the falling edge of WE#
or CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the
AC Characteristics
section for timing
diagrams.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is ready to read array data
after completing an Embedded Program or Embedded
Erase algorithm.
After the device accepts an Erase Suspend command,
the device enters the erase-suspend-read mode, after
which the system can read data from any
Addresses
(x16)
Data
Description
40h
41h
42h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
0031h
Major version number, ASCII
44h
0033h
Minor version number, ASCII
45h
0008h
Address Sensitive Unlock (Bits 1-0)
0 = Required, 1 = Not Required
Process Technology (Bits 7-2) 0010b = 0.23 μm MirrorBit
46h
0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
0001h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h
0001h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
0004h
Sector Protect/Unprotect scheme
04 = 29LV800 mode
4Ah
0000h
Simultaneous Operation
00 = Not Supported, X = Number of Sectors in Bank
4Bh
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch
0001h
Page Mode Type
00 = Not Supported, 01 = 4 Word/8 Byte Page, 02 = 8 Word/16 Byte Page
4Dh
00B5h
ACC (Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
4Eh
00C5h
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
4Fh
0004h/
0005h
Top/Bottom Boot Sector Flag
00h = Uniform Device without WP# protect, 02h = Bottom Boot Device, 03h = Top Boot Device,
04h = Uniform sectors bottom WP# protect, 05h = Uniform sectors top WP# protect
50h
0001h
Program Suspend
00h = Not Supported, 01h = Supported
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AM70PDL129BDH 制造商:SPANSION 制造商全稱:SPANSION 功能描述:2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS
AM70PDL129BDH66I 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP)
AM70PDL129BDH66IS 制造商:SPANSION 制造商全稱:SPANSION 功能描述:2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS
AM70PDL129BDH66IT 制造商:SPANSION 制造商全稱:SPANSION 功能描述:2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS
AM70PDL129BDH85I 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP)