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參數(shù)資料
| 型號： | Am70PDL127CDH85IT |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS |
| 中文描述： | 2 × 64兆位（8米× 16位）的CMOS 3.0伏特，只有頁面模式閃存數(shù)據(jù)存儲128兆位（8米× 16位）的CMOS |
| 文件頁數(shù)： | 90/127頁 |
| 文件大?。?/td> | 849K |
| 代理商： | AM70PDL127CDH85IT |
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88
Am70PDL127CDH/Am70PDL129CDH
November 24, 2003
A D V A N C E I N F O R M A T I O N
Write Protect (WP#)
The Write Protect function provides a hardware
method of protecting the first or last sector without
using V
ID
. Write Protect is one of two functions pro-
vided by the WP#/ACC input.
If the system asserts V
IL
on the WP#/ACC pin, the de-
vice disables program and erase functions in the first
or last sector independently of whether those sectors
were protected or unprotected using the method de-
scribed in “Sector Group Protection and Unprotection”.
Note that if WP#/ACC is at V
IL
when the device is in
the standby mode, the maximum input load current is
increased. See the table in “DC Characteristics”.
If the system asserts V
IH
on the WP#/ACC pin, the de-
vice reverts to whether the first or last sector was pre-
viously set to be protected or unprotected using the
method described in “Sector Group Protection and
Unprotection”. Note: No external pullup is necessary
since the WP#/ACC pin has internal pullup to V
CC
.
Temporary Sector Group Unprotect
(
Note:
In this device, a sector group consists of four adjacent
sectors that are protected or unprotected at the same time
(see
Table 4
).
This feature allows temporary unprotection of previ-
ously protected sector groups to change data in-sys-
tem. The Sector Group Unprotect mode is activated by
setting the RESET# pin to
V
ID
. During this mode, for-
merly protected sector groups can be programmed or
erased by selecting the sector group addresses. Once
V
ID
is removed from the RESET# pin, all the previously
protected sector groups are protected again. Figure 1
shows the algorithm, and Figure 23 shows the timing
diagrams, for this feature.
Figure 1.
Temporary Sector Group
Unprotect Operation
START
Perform Erase or
Program Operations
RESET# = V
IH
Temporary Sector
Group Unprotect
Completed (Note 2)
RESET# = V
ID
(Note 1)
Notes:
1. All protected sector groups unprotected (If WP# = V
IL
,
the first or last sector will remain protected).
2. All previously protected sector groups are protected
once again.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Am70PDL129CDH | 2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS |
| Am70PDL129CDH66IS | 2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS |
| Am70PDL129CDH66IT | 2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS |
| Am70PDL129CDH85IS | 2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS |
| Am70PDL129CDH85IT | 2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM70PDL129BDH | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS |
| AM70PDL129BDH66I | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) |
| AM70PDL129BDH66IS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS |
| AM70PDL129BDH66IT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS |
| AM70PDL129BDH85I | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) |
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