- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366546 > Am70PDL127CDH85IT (Advanced Micro Devices, Inc.) 2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS PDF資料下載
參數(shù)資料
| 型號(hào)： | Am70PDL127CDH85IT |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS |
| 中文描述： | 2 × 64兆位（8米× 16位）的CMOS 3.0伏特，只有頁面模式閃存數(shù)據(jù)存儲(chǔ)128兆位（8米× 16位）的CMOS |
| 文件頁數(shù)： | 124/127頁 |
| 文件大?。?/td> | 849K |
| 代理商： | AM70PDL127CDH85IT |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁第101頁第102頁第103頁第104頁第105頁第106頁第107頁第108頁第109頁第110頁第111頁第112頁第113頁第114頁第115頁第116頁第117頁第118頁第119頁第120頁第121頁第122頁第123頁當(dāng)前第124頁第125頁第126頁第127頁
122
Am70PDL127CDH/Am70PDL129CDH
November 24, 2003
A D V A N C E I N F O R M A T I O N
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 3.0 V V
CC
. Programming specifications assume that
all bits are programmed to 00h.
2. Maximum values are measured at V
CC
= 3.0 V worst case temperature. Maximum values are valid up to and including 100,000
program/erase cycles.
3. Word programming specification is based upon a single word programming operation not utilizing the write buffer.
4. For 1-16 words programmed in a single write buffer programming operation.
5. Effective write buffer specification is calculated on a per-word basis for a 16-word write buffer operation.
6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
7. System-level overhead is the time required to execute the command sequence(s) for the program command. See Tables
12
and
11
for further information on command definitions.
8. The device has a minimum erase and program cycle endurance of 100,000 cycles.
LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V, one pin at a time.
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.5
15
sec
Chip Erase Time
32
128
sec
Single Word Program Time (Note 3)
Word
100
TBD
μs
Accelerated Single Word Program Time
(Note 3)
Word
90
TBD
μs
Total Write Buffer Program Time (Note 4)
352
TBD
μs
Effective Write Buffer Program Time (Note 3) Per Word
22
TBD
μs
Total Accelerated Effective Write Buffer
Program Time (Note 4)
282
TBD
μs
Effective Accelerated Write Buffer PRogram
Time (Note 4)
Word
17.6
TBD
μs
Chip Program Time
92
TBD
sec
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
V
CC
Current
–1.0 V
V
CC
+ 1.0 V
+100 mA
–100 mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Am70PDL129CDH | 2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS |
| Am70PDL129CDH66IS | 2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS |
| Am70PDL129CDH66IT | 2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS |
| Am70PDL129CDH85IS | 2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS |
| Am70PDL129CDH85IT | 2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM70PDL129BDH | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS |
| AM70PDL129BDH66I | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) |
| AM70PDL129BDH66IS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS |
| AM70PDL129BDH66IT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS |
| AM70PDL129BDH85I | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。