參數(shù)資料
型號： AM42BDS640AGBD9IT
廠商： SPANSION LLC
元件分類： 存儲器
英文描述： Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA93
封裝： 8 X 11.60 MM, FBGA-93
文件頁數(shù)： 9/72頁
文件大?。?/td> 1060K
代理商： AM42BDS640AGBD9IT
16
Am42BDS640AG
November 1, 2002
P R E L I M INARY
■ When WP# is at V
IL, sectors 0 and 1 (bottom boot)
or sectors 132 and 133 (top boot) are locked.
■ When ACC is at V
IL, all sectors are locked.
The following hardware data protection measures
prevent accidental erasure or programming, which
might otherwise be caused by spurious system level
signals during V
CC power-up and power-down transi-
tions, or from system noise.
Write Protect (WP#)
The Write Protect (WP#) input provides a hardware
method of protecting data without using V
ID.
If the system asserts V
IL on the WP# pin, the device
disables program and erase functions in sectors 0 and
1 (bottom boot) or sectors 132 and 133 (top boot).
If the system asserts VIH on the WP# pin, the device
reverts to whether the two outermost 8K Byte boot
sectors were last set to be protected or unprotected.
Note that the WP# pin must not be left floating or
unconnected; inconsistent behavior of the device may
result.
Low V
CC Write Inhibit
When V
CC is less than VLKO, the device does not accept
any write cycles. This protects data during V
CC
power-up and power-down. The command register and
all internal program/erase circuits are disabled, and the
device resets to reading array data. Subsequent writes
are ignored until V
CC is greater than VLKO. The system
must provide the proper signals to the control inputs to
prevent unintentional writes when V
CC is greater than
V
LKO.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or
WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
VIL, CE# = VIH or WE# = VIH. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.
Power-Up Write Inhibit
If WE# = CE# = RESET# = V
IL and OE# = VIH during
power up, the device does not accept commands on
the rising edge of WE#. The internal state machine is
automatically reset to the read mode on power-up.
COMMON FLASH MEMORY INTERFACE
(CFI)
The Common Flash Interface (CFI) specification out-
lines device and host system software interrogation
handshake, which allows specific vendor-specified
software algorithms to be used for entire families of
devices. Software support can then be device-indepen-
dent, JEDEC ID-independent, and forward- and back-
ward-compatible for the specified flash device families.
Flash vendors can standardize their existing interfaces
for long-term compatibility.
This device enters the CFI Query mode when the
system writes the CFI Query command, 98h, to
address 55h any time the device is ready to read array
data. The system can read CFI information at the
addresses given in Tables 3-6. To terminate reading
CFI data, the system must write the reset command.
The system can also write the CFI query command
when the device is in the autoselect mode. The device
enters the CFI query mode, and the system can read
CFI data at the addresses given in Tables 3-6. The
system must write the reset command to return the
device to the autoselect mode.
For further information, please refer to the CFI Specifi-
cation and CFI Publication 100, available via the AMD
site at the following URL:
Alternatively, contact an AMD representative for copies
of these documents.
Table 3.
CFI Query Identification String
Addresses
Data
Description
10h
11h
12h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
0002h
0000h
Primary OEM Command Set
15h
16h
0040h
0000h
Address for Primary Extended Table
17h
18h
0000h
Alternate OEM Command Set (00h = none exists)
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參數(shù)描述
AM42BDS640AGTC8IS 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM
AM42BDS640AGTC8IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM
AM42BDS640AGTC9IS 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM
AM42BDS640AGTC9IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM
AM42BDS640AGTD8IS 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM
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