- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄352474 > AM42BDS640AGBD9IT (SPANSION LLC) Stacked Multi-Chip Package (MCP) Flash Memory and SRAM PDF資料下載
參數(shù)資料
| 型號： | AM42BDS640AGBD9IT |
| 廠商： | SPANSION LLC |
| 元件分類： | 存儲器 |
| 英文描述： | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA93 |
| 封裝： | 8 X 11.60 MM, FBGA-93 |
| 文件頁數(shù)： | 6/72頁 |
| 文件大小： | 1060K |
| 代理商： | AM42BDS640AGBD9IT |
第1頁第2頁第3頁第4頁第5頁當(dāng)前第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁
November 1, 2002
Am42BDS640AG
13
P R E L I M INARY
FLASH DEVICE BUS OPERATIONS
Requirements for Asynchronous Read
Operation (Non-Burst)
To read data from the memory array, the system must
first assert a valid address on A21–A0, while driving
AVD# and CE# to V
IL. WE# should remain at VIH. The
rising edge of AVD# latches the address. The data will
appear on DQ15–DQ0. Since the memory array is
divided into four banks, each bank remains enabled for
read access until the command register contents are
altered.
Address access time (t
ACC) is equal to the delay from
stable addresses to valid output data. The chip enable
access time (t
CE) is the delay from the stable addresses
and stable CE# to valid data at the outputs. The output
enable access time (t
OE) is the delay from the falling
edge of OE# to valid data at the output.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory
content occurs during the power transition.
Requirements for Synchronous (Burst)
Read Operation
The device is capable of continuous sequential burst
operation and linear burst operation of a preset length.
When the device first powers up, it is enabled for asyn-
chronous read operation.
Prior to entering burst mode, the system should deter-
mine how many wait states are desired for the initial
word (t
IACC) of each burst access, what mode of burst
operation is desired, which edge of the clock will be the
active clock edge, and how the RDY signal will transi-
tion with valid data. The system would then write the
burst mode configuration register command sequence.
Sequence” and “Flash Command Definitions” for
further details.
Once the system has written the “Set Burst Mode Con-
figuration Register” command sequence, the device is
enabled for synchronous reads only.
The initial word is output t
IACC after the active edge of
the first CLK cycle. Subsequent words are output t
BACC
after the active edge of each successive clock cycle,
which automatically increments the internal address
counter. Note that the device has a fixed internal
address boundary that occurs every 64 words, starting
at address 00003Fh. During the time the device is out-
putting data at this fixed internal address boundary
(address 00003Fh, 00007Fh, 0000BFh, etc.), a two
cycle latency occurs before data appears for the next
address (address 000040h, 000080h, 0000C0h, etc.).
The RDY output indicates this condition to the system
by pulsing low. For standard handshaking devices,
there is no two cycle latency between 3Fh and 40h (or
multiple thereof). See Table 10.
For reduced wait-state handshaking devices, if the
address latched is 3Dh (or 64 multiple), an additional
cycle latency occurs prior to the initial access. If the
address latched is 3Eh (or 64 multiple) two additional
cycle latency occurs prior to the initial access and the 2
cycle latency between 3Fh and 40h (or 64 multiple) will
not occur. For 3Fh latched addresses (or 64 multiple)
three additional cycle latency occurs prior to the initial
access and the 2 cycle latency between 3Fh and 40h
(or 64 multiple) will not occur.
The device will continue to output sequential burst
data, wrapping around to address 000000h after it
reaches the highest addressable memory location,
until the system drives CE# high, RESET# low, or
AVD# low in conjunction with a new address. See
If the host system crosses the bank boundary while
reading in burst mode, and the device is not program-
ming or erasing, a two-cycle latency will occur as
described above in the subsequent bank. If the host
system crosses the bank boundary while the device is
programming or erasing, the device will provide read
status information. The clock will be ignored. After the
host has completed status reads, or the device has
completed the program or erase operation, the host
can restart a burst operation using a new address and
AVD# pulse.
If the clock frequency is less than 6 MHz during a burst
mode operation, additional latencies will occur. RDY
indicates the length of the latency by pulsing low.
8-, 16-, and 32-Word Linear Burst with Wrap Around
The remaining three modes are of the linear wrap
around design, in which a fixed number of words are
read from consecutive addresses. In each of these
modes, the burst addresses read are determined by
the group within which the starting address falls. The
groups are sized according to the number of words
read in a single burst sequence for a given mode (see
Table 2.
Burst Address Groups
As an example: if the starting address in the 8-word
mode is 39h, the address range to be read would be
38 - 3 F h , and t he bur st seq uence w ould be
Mode
Group Size
Group Address Ranges
8-word
8 words
0-7h, 8-Fh, 10-17h, ...
16-word
16 words
0-Fh, 10-1Fh, 20-2Fh, ...
32-word
32 words
00-1Fh, 20-3Fh, 40-5Fh, ...
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F017D-150FE | LM340/LM78XX Series 3-Terminal Positive Regulators; Package: TO-3; No of Pins: 2; Qty per Container: 50; Container: Tray |
| AM29F017D-150FI | LM340/LM78XX Series 3-Terminal Positive Regulators; Package: TO-3; No of Pins: 2; Qty per Container: 50; Container: Tray |
| AM29F017D-70E4C | LM340/LM78XX Series 3-Terminal Positive Regulators; Package: TO-3; No of Pins: 2; Qty per Container: 50; Container: Tray |
| AM29F017D-70E4E | LM140L/LM340L Series 3-Terminal Positive Regulators; Package: TO-39; No of Pins: 3; Qty per Container: 500; Container: Box |
| AM29F017D-70E4I | LM140L/LM340L Series 3-Terminal Positive Regulators; Package: TO-39; No of Pins: 3; Qty per Container: 500; Container: Box |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM42BDS640AGTC8IS | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM |
| AM42BDS640AGTC8IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM |
| AM42BDS640AGTC9IS | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM |
| AM42BDS640AGTC9IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM |
| AM42BDS640AGTD8IS | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。