參數(shù)資料
型號： AM41PDS3224DB11FS
廠商： SPANSION LLC
元件分類： 存儲器
英文描述： SPECIALTY MEMORY CIRCUIT, PBGA73
封裝： 8 X 11.60 MM, FBGA-73
文件頁數(shù)： 31/59頁
文件大?。?/td> 1072K
代理商： AM41PDS3224DB11FS
36
Am41PDS3224D
May 13, 2002
P R E L IMINARY
TEST CONDITIONS
Table 12.
Test Specifications
KEY TO SWITCHING WAVEFORMS
2.7 k
CL
6.2 k
3.3 V
Device
Under
Test
Note: Diodes are IN3064 or equivalent
Figure 12.
Test Setup
Test Condition
100, 110 ns
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
2.0
V
Input timing measurement reference
levels
1.0
V
Output timing measurement
reference levels
1.0
V
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
2.0 V
0.0 V
1.0 V
Output
Measurement Level
Input
Figure 13.
Input Waveforms and Measurement Levels
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相關代理商/技術參數(shù)
參數(shù)描述
AM41PDS3224DB11IS 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
AM41PDS3224DB11IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
AM41PDS3224DB35IS 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
AM41PDS3224DB35IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
AM41PDS3224DB40IS 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
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