參數(shù)資料
型號(hào)： AM41LV3204M
英文描述： Stacked Multi-chip Package (MCP) 32 Mbit (4 M x 8 bit/2 M x 16-bit) Flash Memory and 4 Mbit (512K x 8-Bit/256 K x 16-Bit) Static RAM (Preliminary)
中文描述： 堆疊式多芯片封裝（MCP）32兆位（4個(gè)M × 8位/ 2米x 16位）閃存和4兆位（為512k × 8-Bit/256畝x 16位），靜態(tài)存儲(chǔ)器（初步）
文件頁(yè)數(shù)： 42/67頁(yè)
文件大?。?/td> 1030K
代理商： AM41LV3204M
June 10, 2003
Am41LV3204M
41
P R E L I M I N A R Y
SRAM DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Leakage Current
V
IN
= V
SS
to V
CC
CE1#s = V
IH
, CE2s = V
IL
or OE# =
V
IH
or WE# = V
IL
, V
IO
= V
SS
to V
CC
I
IO
= 0 mA, CE1#s = V
IL
, CE2s =
WE# = V
IH
, V
IN
= V
IH
or V
IL
Cycle time = 1 μs, 100% duty,
I
= 0 mA, CE1#s
≤
0.2 V,
CE2
≥
V
CC
– 0.2 V, V
IN
≤
0.2 V or
V
IN
≥
V
CC
– 0.2 V, CIOs = V
SS
or
V
CC
Cycle time = Min., I
IO
= 0 mA,
100% duty, CE1#s = V
, CE2s =
V
IH
, V
IN
= V
IL
= or V
IH
, CIOs = V
SS
or V
CC
–1.0
1.0
μA
I
LO
Output Leakage Current
–1.0
1.0
μA
I
CC
Operating Power Supply Current
3
mA
I
CC1
s
Average Operating Current
3
mA
I
CC2
s
Average Operating Current
30
mA
V
OL
V
OH
Output Low Voltage
I
OL
= 2.1 mA
I
OH
= –1.0 mA
CE1#s = V
IH
,
CE2 = V
IL
, Other
inputs = V
IH
or V
IL
CE1#s
≥
V
CC
– 0.2 V, CE2
≥
V
CC
–
0.2 V (CE1#s controlled) or CE2
≤
0.2 V (CE2s controlled) Other
input = 0 ~ V
CC
, CIOs = V
SS
or V
CC
0.4
V
Output High Voltage
2.4
V
I
SB
Standby Current (TTL)
0.3
mA
I
SB1
Standby Current (CMOS)
10
μA
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