參數(shù)資料
型號(hào): AM41LV3204M
英文描述: Stacked Multi-chip Package (MCP) 32 Mbit (4 M x 8 bit/2 M x 16-bit) Flash Memory and 4 Mbit (512K x 8-Bit/256 K x 16-Bit) Static RAM (Preliminary)
中文描述: 堆疊式多芯片封裝(MCP)32兆位(4個(gè)M × 8位/ 2米x 16位)閃存和4兆位(為512k × 8-Bit/256畝x 16位),靜態(tài)存儲(chǔ)器(初步)
文件頁(yè)數(shù): 25/67頁(yè)
文件大小: 1030K
代理商: AM41LV3204M
24
Am41LV3204M
June 10, 2003
P R E L I M I N A R Y
Table 11.
Device Geometry Definition
Addresses
(x16)
Addresses
(x8)
Data
Description
27h
4Eh
0016h
Device Size = 2
N
byte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0005h
0000h
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
58h
0002h
Number of Erase Block Regions within device (01h = uniform device, 02h = boot
device)
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
007Fh
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
62h
64h
66h
68h
003Eh
0000h
0000h
0001h
Erase Block Region 2 Information (refer to CFI publication 100)
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information (refer to CFI publication 100)
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 Information (refer to CFI publication 100)
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