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參數(shù)資料
| 型號： | AM30LV0064DJ40F2I |
| 英文描述： | 8-SOIC (WIDE BODY) IND TEMP, GREEN(BIOS FLASH) |
| 中文描述： | NAND型閃存EEPROM |
| 文件頁數(shù)： | 25/41頁 |
| 文件大?。?/td> | 859K |
| 代理商： | AM30LV0064DJ40F2I |
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Am30LV0064D
25
DC CHARACTERISTICS
TEST CONDITIONS
Table 6.
Test Specifications
Figure 15.
Test Setup
Parameter
Description
Test Conditions
Min
Typ
Max
Unit
I
CC1
Sequential Read Current
t
CYCLE
=50 ns, CE#=V
IL
,
I
OUT
=0 mA
–
10
20
mA
I
CC2
Command, Address Input
Current
t
CYCLE
=50 ns, CE#=V
IL
–
10
20
mA
I
CC3
I
CC4
I
CC5
I
SB1
Data Input Current
–
10
20
mA
Program Current
–
10
20
mA
Erase Current
–
10
20
mA
Standby Current (TTL)
CE#=V
IH
CE#=V
CC
–0.2 V,
WP#= SE# = 0V/V
CC
V
IN
= 0 V to 3.6 V
V
OUT
= 0 V to 3.6 V
All I/O Pins
–
–
1
mA
I
SB2
Standby Current (CMOS)
–
10
50
μ
A
I
LI
I
LO
Input Leakage Current
–
–
10
μ
A
μ
A
Output Leakage Current
–
–
10
V
IH
Input High Voltage
2.0
–
V
CCQ
+ 0.3
V
CC
+ 0.3
0.8
V
All Except I/O Pins
2.0
–
V
V
IL
V
OH
V
OL
Input Low Voltage, All Inputs
–0.3
–
V
Output High Voltage
I
OH
= –400 μA, V
CC
= V
CCQ
I
OL
=2.1 mA, V
CC
= V
CCQ
V
OL
=0.4 V
V
CC
– 0.3
–
–
–
V
Output Low Voltage
–
0.4
V
I
OL
(RY/BY#)
Output Low Current (RY/BY#)
8
10
–
mA
Test Conditions
V
CC
=
3.0 V
± 10%
V
CC
=
3.3 V
± 10%
Unit
Output Load
1 TTL Gate
Output Load Capacitance, C
L
(including jig capacitance)
50
100
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0 – 2.4
V
Input Timing Measurement
Reference Levels
1.5
V
Output Timing Measurement
Reference Levels
1.5
V
CL
Device
Under Test
6.2 K
2.7 K
3.3 V
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|---|---|
| AM30LV0064DJ40F2IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology |
| AM30LV0064DJ40WGI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NAND Flash EEPROM |
| AM30LV0064DJ40WGIT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology |
| AM30N02-40D | 制造商:ANALOGPOWER 制造商全稱:ANALOGPOWER 功能描述:N-Channel 20-V (D-S) MOSFET |
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