參數(shù)資料
型號: AM29BDS128HD9VKI
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
中文描述: 8M X 16 FLASH 1.8V PROM, 50 ns, PBGA80
封裝: 11.50 X 9 MM, 0.80 MM PITCH, FPBGA-80
文件頁數(shù): 84/89頁
文件大?。?/td> 913K
代理商: AM29BDS128HD9VKI
82
Am29BDS128H/Am29BDS640H
27024B3 May 10, 2006
D A T A S H E E T
AC CHARACTERISTICS
Wait State Decoding Addresses:
A14, A13, A12 = “111”
Reserved
A14, A13, A12 = “110”
Reserved
A14, A13, A12 = “101”
5 programmed, 7 total
A14, A13, A12 = “100”
4 programmed, 6 total
A14, A13, A12 = “011”
3 programmed, 5 total
A14, A13, A12 = “010”
2 programmed, 4 total
A14, A13, A12 = “001”
1 programmed, 3 total
A14, A13, A12 = “000”
0 programmed, 2 total
Note:
Figure assumes address D0 is not at an address boundary, active clock edge is rising, and wait state is set to “101”.
Figure 48.
Example of Wait States Insertion
Data
AVD#
OE#
CLK
1
2
3
4
5
D0
D1
0
1
6
2
7
3
total number of clock cycles
following AVD# falling edge
Rising edge of next clock cycle
following last wait state triggers
next burst data
number of clock cycles
programmed
4
5
相關(guān)PDF資料
PDF描述
AM29BDS128HD9VMI 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
AM29BDS128HE8 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
AM29BDS128HE8VFI 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
AM29BDS128HE8VKI 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
AM29BDS128HE8VMI 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
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