參數(shù)資料
型號: AM29BDS128HD9VKI
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
中文描述: 8M X 16 FLASH 1.8V PROM, 50 ns, PBGA80
封裝: 11.50 X 9 MM, 0.80 MM PITCH, FPBGA-80
文件頁數(shù): 68/89頁
文件大?。?/td> 913K
代理商: AM29BDS128HD9VKI
66
Am29BDS128H/Am29BDS640H
27024B3 May 10, 2006
D A T A S H E E T
AC CHARACTERISTICS
Asynchronous Mode Read
Notes:
1. Asynchronous Access Time is from the last of either stable addresses or the falling edge of AVD#.
2. Not 100% tested.
Parameter
Description
75 MHz
66 MHz
54 MHz
Unit
JEDEC Standard
t
CE
Access Time from CE# Low
Max
45
50
55
ns
t
ACC
Asynchronous Access Time (Note 1)
Max
45
50
55
ns
t
AVDP
AVD# Low Time
Min
10
12
ns
t
AAVDS
Address Setup Time to Rising Edge of AVD
Min
4
5
ns
t
AAVDH
Address Hold Time from Rising Edge of AVD
Min
5.5
6
7
ns
t
OE
Output Enable to Output Valid
Max
8.5
11
13.5
ns
t
OEH
Output Enable Hold
Time
Read
Min
0
ns
Toggle and
Data# Polling
Min
8
10
ns
t
OEZ
Output Enable to High Z (Note 2)
Max
8
10
ns
t
CAS
CE# Setup Time to AVD#
Min
0
ns
相關(guān)PDF資料
PDF描述
AM29BDS128HD9VMI 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
AM29BDS128HE8 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
AM29BDS128HE8VFI 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
AM29BDS128HE8VKI 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
AM29BDS128HE8VMI 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
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