- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375288 > AM29BDS128HD9VKI (SPANSION LLC) 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PDF資料下載
參數(shù)資料
| 型號： | AM29BDS128HD9VKI |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| 中文描述： | 8M X 16 FLASH 1.8V PROM, 50 ns, PBGA80 |
| 封裝： | 11.50 X 9 MM, 0.80 MM PITCH, FPBGA-80 |
| 文件頁數(shù)： | 61/89頁 |
| 文件大?。?/td> | 913K |
| 代理商： | AM29BDS128HD9VKI |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁當(dāng)前第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁
May 10, 2006 27024B3
Am29BDS128H/Am29BDS640H
59
D A T A S H E E T
AC CHARACTERISTICS
Notes:
1. Figure shows total number of wait states set to seven cycles. The total number of wait states can be programmed from two
cycles to seven cycles. Clock is set for active rising edge.
2. If any burst address occurs at a 64-word boundary, two additional clock cycle are inserted, and is indicated by RDY.
3. The device is in synchronous mode.
Figure 18.
Synchronous Burst Mode Read
Note:
Figure assumes 7 wait states for initial access and automatic detect synchronous read. D0–D7 in data waveform indicate
the order of data within a given 8-word address range, from lowest to highest. Starting address in figure is the 7th address in
range (A6). See “Requirements for Synchronous (Burst) Read Operation”. The Set Configuration Register command sequence
has been written with A18=1; device will output RDY with valid data.
Figure 19.
8-word Linear Burst with Wrap Around
Da
Da + 1
Da + n
OE#
Data
Addresses
Aa
AVD#
RDY
CLK
CE#
t
CAS
t
AAS
t
AVC
t
AVD
t
AAH
t
OE
t
RACC
t
OEZ
t
CEZ
t
IACC
t
BDH
7 cycles for initial access shown.
Hi-Z
Hi-Z
Hi-Z
1
2
3
4
5
6
7
t
RDYS
t
BACC
t
ACC
t
CR
D6
D7
OE#
Data
Addresses
A6
AVD#
RDY
CLK
CE#
t
CES
t
ACS
t
AVC
t
AVD
t
ACH
t
OE
t
IACC
t
ACC
t
BDH
D0
D1
D5
D6
7 cycles for initial access shown.
Hi-Z
t
RACC
1
2
3
4
5
6
7
t
RDYS
t
BACC
t
CR
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29BDS128HD9VMI | 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| AM29BDS128HE8 | 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| AM29BDS128HE8VFI | 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| AM29BDS128HE8VKI | 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| AM29BDS128HE8VMI | 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29BDS128HE9VKI | 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel/Serial 1.8V 128M-Bit 8M x 16 50ns 80-Pin FBGA |
| AM29BDS643GT5KVAI | 制造商:Spansion 功能描述:FLASH PARALLEL 1.8V 64MBIT 4MX16 55NS 44FBGA - Trays |
| AM29BL802CB-65RZET | 制造商:Spansion 功能描述: |
| AM29C01WW WAF | 制造商:Advanced Micro Devices 功能描述: |
| AM29C10API | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。