參數(shù)資料
型號： AM29BDS128HD9VKI
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
中文描述： 8M X 16 FLASH 1.8V PROM, 50 ns, PBGA80
封裝： 11.50 X 9 MM, 0.80 MM PITCH, FPBGA-80
文件頁數(shù)： 79/89頁
文件大小： 913K
代理商： AM29BDS128HD9VKI
May 10, 2006 27024B3
Am29BDS128H/Am29BDS640H
77
D A T A S H E E T
AC CHARACTERISTICS
Notes:
1. The timings are similar to synchronous read timings.
2. VA = Valid Address. Two read cycles are required to determine status. When the Embedded Algorithm operation is complete, the
toggle bits will stop toggling.
3. RDY is active with data (A18 = 0 in the Configuration Register). When A18 = 1 in the Configuration Register, RDY is active one
clock cycle before data.
Figure 42.
Synchronous Data Polling Timings/Toggle Bit Timings
CE#
CLK
AVD#
Addresses
OE#
Data
RDY
Status Data
Status Data
VA
VA
t
IACC
t
IACC
Note:
DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle
DQ2 and DQ6.
Figure 43.
DQ2 vs. DQ6
Enter
Erase
Erase
Resume
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
Suspend
Program
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
Embedded
Erasing
相關(guān)PDF資料
PDF描述
AM29BDS128HD9VMI 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
AM29BDS128HE8 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
AM29BDS128HE8VFI 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
AM29BDS128HE8VKI 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
AM29BDS128HE8VMI 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
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AM29BDS643GT5KVAI 制造商:Spansion 功能描述:FLASH PARALLEL 1.8V 64MBIT 4MX16 55NS 44FBGA - Trays
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