參數(shù)資料
型號(hào)： AM1011-500
廠商： 意法半導(dǎo)體
英文描述： RF & Microwave Transistors Avionics Applications(用于航空電子的RF和微波晶體管)
中文描述： 射頻
文件頁數(shù)： 1/4頁
文件大小： 53K
代理商： AM1011-500
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
.400 x .600 2LFL (M198)
hermetically sealed
.
P
OUT
=
500 W MIN. WITH 8.5 dB MIN.
GAIN
.
10:1 LOAD VSWR CAPABILITY @ 10
μ
S.,
1% DUTY
.
SIXPAC
HERMETIC METAL/CERAMIC
PACKAGE
.
EMITTER SITE BALLASTED OVERLAY
GEOMETRY
.
REFRACTORY/GOLD METALLIZATION
.
LOW THERMAL RESISTANCE
.
INTERNAL INPUT/OUTPUT MATCHING
.
CHARACTERIZED UNDER 32
μ
S.,2%
DUTY CYCLE PULSE CONDITIONS
DESCRIPTION
The AM1011-500 device is a high power Class C
transistor specifically designed for L-Band Av-
ionic applications involving high pulse burst duty
cycles.
This device is capable of operation over a wide
range of pulse widths, duty cycles, and tempera-
tures. Low RF thermal resistance and computer-
ized automatic wire bonding techniques ensure
high reliability and product consistency.
The AM1011-500 is supplied in the SIXPAC
Hermetic metal/ceramic package with internal in-
put/output matching structures.
PIN CONNECTION
BRANDING
1011-500
ORDER CODE
AM1011-500
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
°
C)
Symbol
P
DISS
I
C
V
CC
T
J
T
STG
Parameter
Value
1,360
27
55
Unit
W
A
V
°
C
°
C
Power Dissipation*
Device Current*
Collector-Supply Voltage*
(T
C
≤
100
°
C)
Junction Temperature (Pulsed RF Operation)
250
Storage Temperature
65 to +200
R
TH(j-c)
Junction-Case Thermal Resistance*
0.11
°
C/W
*Appliesonly torated RF amplifieroperation
AM1011-500
1. Collector
2. Base
3. Emitter
4. Base
THERMAL DATA
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