參數(shù)資料
型號： AM1214-100
廠商： 意法半導(dǎo)體
英文描述： RF & Microwave Transistors L-Band Radar Applications(用于L波段雷達(dá)脈沖驅(qū)動的RF和微波晶體管)
中文描述： 射頻
文件頁數(shù)： 1/3頁
文件大?。?/td> 34K
代理商： AM1214-100
PRELIMINARY DATA
August 1992
L-BAND RADAR APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .500 2LFL (S038)
hermetically sealed
ORDER CODE
AM1214-100
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
100 W MIN. WITH 6.0 dB GAIN
DESCRIPTION
The AM1214-100 device is a high power Class
C transistor specifically designed for L-Band Radar
pulsed driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles, and tempera-
tures and is capable of withstanding 3:1 output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bond-
ing techniques ensure high reliability and product
consistency.
AM1214-100 is supplied in the grounded IMPAC
hermetic metal/ceramic package with internal
input/output matching structures.
PIN CONNECTION
BRANDING
1214-100
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
P
DISS
I
C
V
CC
T
J
T
STG
Parameter
(T
C
≤
100C)
Value
270
Unit
W
Power Dissipation*
Device Current*
Collector-Supply Voltage*
13.5
32
A
V
°
C
°
C
Junction Temperature (Pulsed RF Operation)
Storage Temperature
250
65 to +200
R
TH(j-c)
Junction-Case Thermal Resistance*
0.55
°
C/W
*Applies only to rated RF amplifier operation
AM1214-100
1. Collector
2. Base
3. Emitter
4. Base
THERMAL DATA
1/3
相關(guān)PDF資料
PDF描述
AM1214-130 RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS
AM1214-175 RF & Microwave Transistors L-Band Radar Applications(用于L波段雷達(dá)脈沖驅(qū)動的RF和微波晶體管)
AM1214-200 RF & Microwave Transistors L-Band Radar Applications(用于L波段雷達(dá)脈沖輸出和驅(qū)動的RF和微波晶體管)
AM1214-300 RF & Microwave Transistors L-Band Radar Applications(用于L波段雷達(dá)脈沖輸出和驅(qū)動的RF和微波晶體管)
AM1214-325 RF & Microwave Transistors L-Band Radar Applications(用于L波段雷達(dá)脈沖輸出和驅(qū)動的RF和微波晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM1214-130 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS
AM1214-175 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
AM1214-200 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
AM1214-250 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
AM1214-300 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR
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