參數(shù)資料
型號(hào)： AM1214-200
廠商： 意法半導(dǎo)體
英文描述： RF & Microwave Transistors L-Band Radar Applications(用于L波段雷達(dá)脈沖輸出和驅(qū)動(dòng)的RF和微波晶體管)
中文描述： 射頻
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 57K
代理商： AM1214-200
PRELIMINARY DATA
September 1992
L-BAND RADAR APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .500 2LFL (M205)
hermetically sealed
ORDER CODE
AM1214-200
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
200 W MIN. WITH 7.0 dB GAIN
DESCRIPTION
The AM1214-200 device is a high power Class
C transistor specifically designed for L-Band Radar
pulsed output and driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures, and wiil tolerate severe mismatch and over-
drive conditions. Low RF thermal resistance and
computerized automatic wire bonding techniques
ensure high reliability and product consistency.
AM1214-200 is supplied inthe BIGPAC
hermetic
metal/ceramic package with internal input/output
matching structures.
PIN CONNECTION
BRANDING
1214-200
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
P
DISS
I
C
V
CC
T
J
T
STG
Parameter
(T
C
≤
100
°
C)
Value
575
16
40
Unit
W
A
V
°
C
°
C
Power Dissipation*
Device Current*
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
250
65 to +200
R
TH(j-c)
Junction-Case Thermal Resistance*
0.26
°
C/W
*Appliesonlyto ratedRF amplifier operation
AM1214-200
1. Collector
2. Base
3. Emitter
4. Base
THERMAL DATA
1/4
相關(guān)PDF資料
PDF描述
AM1214-300 RF & Microwave Transistors L-Band Radar Applications(用于L波段雷達(dá)脈沖輸出和驅(qū)動(dòng)的RF和微波晶體管)
AM1214-325 RF & Microwave Transistors L-Band Radar Applications(用于L波段雷達(dá)脈沖輸出和驅(qū)動(dòng)的RF和微波晶體管)
AM1416-100 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 8.5A I(C) | FO-53VAR
AM1416-200 TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 12A I(C) | FO-83VAR
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