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參數(shù)資料
| 型號： | AM1214-300 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | RF & Microwave Transistors L-Band Radar Applications(用于L波段雷達(dá)脈沖輸出和驅(qū)動的RF和微波晶體管) |
| 中文描述： | 射頻 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 91K |
| 代理商： | AM1214-300 |
September 1992
L-BAND RADAR APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .500 2LFL (S038)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
5:1 VSWR CAPABILITY
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
270 W MIN. WITH 6.3 dB GAIN
DESCRIPTION
The AM1214-300 device is a high power transistor
specifically designed for L-Band radar pulsed out-
put and driver applications.
This device is designed for operation under moder-
ate pulse width and duty cycle pulse conditions
and is capable of withstanding 5:1 output VSWR
at rated RF conditions. Low RF thermal resistance
and computerized automatic wire bonding tech-
niques ensure high reliability and product consist-
ency.
The AM1214-300 is supplied inthe BIGPAC
Her-
metic Metal/Ceramic package with internal
Input/Output matching structures.
PIN CONNECTION
BRANDING
1214-300
ORDER CODE
AM1214-300
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
Parameter
(T
C
≤
100
°
C)
Value
Unit
P
DISS
I
C
V
CC
T
J
T
STG
Power Dissipation*
730
W
Device Current*
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
18.75
55
250
A
V
°
C
°
C
65 to +200
R
TH(j-c)
Junction-Case Thermal Resistance*
0.24
°
C/W
*Applies only to rated RFamplifier operation
AM1214-300
1. Collector
2. Base
3. Emitter
4. Base
THERMAL DATA
1/6
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| AM1214-325 | RF & Microwave Transistors L-Band Radar Applications(用于L波段雷達(dá)脈沖輸出和驅(qū)動的RF和微波晶體管) |
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