參數(shù)資料
型號(hào)： AM1214-175
廠商： 意法半導(dǎo)體
英文描述： RF & Microwave Transistors L-Band Radar Applications(用于L波段雷達(dá)脈沖驅(qū)動(dòng)的RF和微波晶體管)
中文描述： 射頻
文件頁數(shù)： 1/6頁
文件大?。?/td> 94K
代理商： AM1214-175
September 1992
L-BAND RADAR APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .500 2LFL (S038)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
3:1 VSWR CAPABILITY
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
160 W MIN. WITH 7.3 dB GAIN
DESCRIPTION
The AM1214-175 device is a high power Class
C transistor specifically designed for L-Band radar
pulsed output and driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures and is capable of withstanding 3:1 output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bond-
ing techniques ensure high reliability and product
consistency.
The AM1214-175 is supplied inthe BIGPAC
Her-
metic Metal/Ceramic package with internal
Input/Output matching structures.
PIN CONNECTION
BRANDING
1214-175
ORDER CODE
AM1214-175
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
P
DISS
I
C
V
CC
T
J
T
STG
Parameter
(T
C
≤
100
°
C)
Value
330
14
45
Unit
W
A
V
°
C
°
C
Power Dissipation*
Device Current*
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
250
65 to +200
R
TH(j-c)
Junction-Case Thermal Resistance*
0.45
°
C/W
*Applies only to rated RFamplifier operation
AM1214-175
1. Collector
2. Base
3. Emitter
4. Base
THERMAL DATA
1/6
相關(guān)PDF資料
PDF描述
AM1214-200 RF & Microwave Transistors L-Band Radar Applications(用于L波段雷達(dá)脈沖輸出和驅(qū)動(dòng)的RF和微波晶體管)
AM1214-300 RF & Microwave Transistors L-Band Radar Applications(用于L波段雷達(dá)脈沖輸出和驅(qū)動(dòng)的RF和微波晶體管)
AM1214-325 RF & Microwave Transistors L-Band Radar Applications(用于L波段雷達(dá)脈沖輸出和驅(qū)動(dòng)的RF和微波晶體管)
AM1416-100 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 8.5A I(C) | FO-53VAR
AM1416-200 TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 12A I(C) | FO-83VAR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM1214-200 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
AM1214-250 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
AM1214-300 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR
AM1214-325 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
AM1215-66NI 制造商:WALL 制造商全稱:Wall Industries,Inc. 功能描述:Highly suitable for high speed pick and place machine operation
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