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參數(shù)資料
| 型號： | AM1011-400 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | RF & Microwave Transistors L-Band Avionics Applications(用于L波段航空電子的RF和微波晶體管) |
| 中文描述： | 射頻 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 91K |
| 代理商： | AM1011-400 |
September 1992
L-BAND AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .500 2LFL (S038)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
15:1 VSWR CAPABILITY
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
400 W MIN. WITH 8.0 dB GAIN
DESCRIPTION
The AM1011-400 device is a high power Class
C transistor specifically designed for TCAS and
Mode-S pulsed output and driver applications.
This device is designed for operation under moder-
ate pulse width and duty cycle pulse conditions
and is capable of withstanding 15:1 output VSWR
at rated RF conditions. Low RF thermal resistance
and computerized automatic wire bonding tech-
niques ensure high reliability and product consist-
ency.
The AM1011-400 is supplied in the BIGPAC
Her-
metic Metal/Ceramic package Input/Output match-
ing structures.
PIN CONNECTION
BRANDING
1011-400
ORDER CODE
AM1011-400
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
P
DISS
I
C
V
CC
T
J
T
STG
Parameter
(T
C
≤
100
°
C)
Value
880
24
55
Unit
W
A
V
°
C
°
C
Power Dissipation*
Device Current*
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
250
65 to +200
R
TH(j-c)
Junction-Case Thermal Resistance*
0.17
°
C/W
*Applies only to rated RFamplifier operation
AM1011-400
1. Collector
2. Base
3. Emitter
4. Base
THERMAL DATA
1/6
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