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參數資料
| 型號： | AM1011-075 |
| 廠商： | 意法半導體 |
| 英文描述： | RF & Microwave Transistors L-Band Avionics Applications(用于L波段航空電子應答機/詢問機脈沖輸出和驅動的RF和微波晶體管) |
| 中文描述： | 射頻 |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 63K |
| 代理商： | AM1011-075 |
September 1992
L-BAND AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .400 2LFL (S036)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
10:1 VSWR CAPABILITY
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
75 W MIN. WITH 9.2 dB GAIN
DESCRIPTION
The AM1011-075 device is a high power Class
C transistor specifically designed for L-Band
Avionics transponder/interrogator pulsed output
and driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles, and tempera-
tures and is capable of withstanding 10:1 output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bond-
ing techniques ensure high reliability and product
consistency.
The AM1011-075 is supplied in the AMPAC
Her-
metic Metal/Ceramic package with internal
Input/Output matching structures.
PIN CONNECTION
BRANDING
1011-75
ORDER CODE
AM1011-075
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
P
DISS
I
C
V
CC
T
J
T
STG
Parameter
(T
C
≤
100
°
C)
Value
175
5.4
55
Unit
W
A
V
°
C
°
C
Power Dissipation*
Device Current*
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
250
65 to +200
R
TH(j-c)
Junction-Case Thermal Resistance*
0.86
°
C/W
*Applies only to rated RFamplifier operation
AM1011-075
1. Collector
2. Base
3. Emitter
4. Base
THERMAL DATA
1/4
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相關代理商/技術參數 |
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|---|---|
| AM1011-300 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
| AM1011-400 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:L-BAND AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS |
| AM1011-500 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
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