參數(shù)資料
型號(hào)： AK7706VT
英文描述： Consumer IC
中文描述： 消費(fèi)性IC
文件頁(yè)數(shù)： 45/52頁(yè)
文件大小： 1085K
代理商： AK7706VT
[ASAHI KASEI] [AK7706]
<M0058-E-01>
1999/10
- 45 -
7-3) Write during RUN phase
7-3-a) CRAM rewrite preparation and write (during RUN phase)
This function is used to rewrite CRAM (coefficient RAM) during the program execution. After inputting the command code, you can
input a maximum of 16 data bytes of a continuous address you want to rewrite.
Then input the write command code and rewrite the leading address. Every time the RAM address to be rewritten is specified, the
contents of RAM are rewritten. The following is an example to show how five data bytes from address "10" of the coefficient RAM are
rewritten:
Coefficient RAM execution address 7 8 9 10 11 13 16 11 12 13 14 15
a
a
a
a
a
Rewrite position
￡
￡
á
￡
￡
￡
Note that address "13" is not executed until address "12" is rewritten.
Data transfer procedure
* Preparation for rewrite
Command code A8h ( 1 0 1 0 1 0 0 0 )
Data ( D15 . . . . D8 )
Data ( D7 . . . . . D0 )
* Rewrite
Command code A4h ( 1 0 1 0 0 1 0 0 )
Address upper ( 0 0 0 0 0 0 0 A8 )
Address lower (A7 . . . . A0 )
RDY
RESET = “H”
10101000 D15 . . . D0 10100100 A15 . . . A0
SI
SCLK
RQ
CRAM rewriting preparation and writing
AL
Longer of (16-n) x 2 MCLK
(n: number of data) and AL
max 200ns
RDYLG Note)
Note: The RDY signal will go to high within the maximum of two LRCLKs if the RDYLG width
is programmed to ensure a new address to be rewritten within one sampling cycle.
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