參數(shù)資料
型號: AGR26125EU
廠商: TRIQUINT SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET
文件頁數(shù): 5/9頁
文件大小: 364K
代理商: AGR26125EU
125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET
E
5
2
1
6
2
R
G
A
Typical Performance Characteristics
Figure 3. Series Equivalent Input and Output Impedances
MHz (f)
ZS Ω
(
complex source impedance)
ZL Ω
(
complex optimum load impedance)
7
.
3j
5
.
2
9
.
4
1j
0
.
8
1
)
1
f(
0
5
2
5
.
3j
3
.
2
8
.
5
1j
7
.
5
1
)
2
f(
5
3
5
2
.
3j
1
.
2
0
.
6
1j
0
.
2
1
)
3
f(
5
9
5
2
9
.
2j
9
.
1
3
.
5
1j
0
.
9
)
4
f(
5
6
2
7
.
2j
7
.
1
6
.
4
1j
5
.
7
)
5
f(
0
7
2
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
50
0.2
0.4
0.6
0.8
1.0
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
-160
170
-170
180
±
90
-90
-85
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
0.04
0.05
0.06
0.07
0.08
0.09
0.1
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.18
0.19
0.2
0.21
0.22
0.23
0.24
0.25
0.26
0.27
0.28
0.29
0.3
0.31
0.3
2
0.33
0.34
0.35
0.36
0.37
0.38
0.39
0.4
0.41
0.4
2
0.4
3
0.44
0.45
0.46
0.4
7
0.48
0.49
0.0
A
N
G
L
E
O
F
T
R
A
N
SM
IS
SI
O
N
C
O
E
FF
IC
IE
N
T
IN
D
E
G
R
E
S
A
N
G
L
E
O
F
R
E
FL
E
C
T
IO
N
C
O
E
FF
IC
IE
N
T
IN
D
E
G
R
E
S
>
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
<
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
<
IN
D
U
C
T
CA
PA
CIT
IV
ER
EA
CT
AN
CE
CO
M
PO
NE
NT
(-j
X/
Zo
),
O
R
IN
D
U
C
TI
V
E
SU
SC
EP
TA
N
C
E
(-
jB
/
Y
o)
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
F
ZS
f5
f1
ZL
f1
f5
Z0 = 10 Ω
DUT
ZS
ZL
INPUT MATCH
OUTPUT MATCH
DRAIN (6, 7)
SOURCE (9)
GATE (2, 3)
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