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參數(shù)資料
| 型號(hào)： | AGR26125EU |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 364K |
| 代理商： | AGR26125EU |
125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET
E
5
2
1
6
2
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A
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics
Table 5. RF Characteristics
* 3GPP W-CDMA, typical P/A ratio of 8.5 dB at 0.01% CCDF, f1 = 2590.0 MHz, and f2 = 2600 MHz. VDD = 28 Vdc, IDQ = 1300 mA, and
POUT = 20 W avg.
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Off Characteristics
Drain-source Breakdown Voltage (VGS = 0, ID = 200 A)
V(BR)DSS
65
—
Vdc
Gate-source Leakage Current (VGS = 5 V, VDS = 0 V)
IGSS
—
4
Adc
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V)
IDSS
—
12
Adc
On Characteristics
Forward Transconductance (VDS = 10 V, ID = 1 A)
GFS
—
9
—
S
Gate Threshold Voltage (VDS = 10 V, ID = 400 A)
VGS(TH)
—
4.8
Vdc
Gate Quiescent Voltage (VDS = 28 V, ID = 1300 mA)
VGS(Q)
—
3.8
—
Vdc
Drain-source On-voltage (VGS = 10 V, ID
V
)
A
1
=
DS(ON)
—
0.08
—
Vdc
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Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
(This part is internally matched on both the input and output.)
CRSS
—
3.0
—
pF
Functional Tests (in Agere Systems Supplied Test Fixture)
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PS
—
11.5
—
dB
Drain Efficiency*
η
—
20
—
%
Third-order Intermodulation Distortion*
(IMD3 measured over 3.84 MHz BW @ f1 – 10 MHz
and f2 + 10 MHz)
IM3
—
–38
—
dBc
Adjacent Channel Power Ratio*
(ACPR measured over BW of 3.84 MHz @ f1 – 5 MHz
and f2 + 5 MHz)
ACPR
—
–41
—
dBc
B
d
—
5
1
–
—
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Power Output, 1 dB Compression Point
(VDD = 28 V, fC = 2600.0 MHz, 6 s pulse at 10% duty)
P1dB
—
125
—
W
Output Mismatch Stress
(VDD = 28 V, POUT = 125 W (CW), IDQ = 1300 mA, fC = 2600.0 MHz
VSWR = 10:1; [all phase angles])
ψ
No degradation in output power.
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