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參數(shù)資料
| 型號： | AGRA5XU |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 43K |
| 代理商： | AGRA5XU |
Preliminary Product Brief
February 2004
AGRA5XU
5 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGRA5XU is a 5 W, 100 MHz—1.0 GHz broad-
band general-purpose, high-voltage, gold-metalized,
laterally diffused metal oxide semiconductor
(LDMOS) RF power transistor suitable for base sta-
tion power amplifier applications with frequencies up
to 1.0 GHz. The AGRA5XU is also suitable for time
division multiple access (TDMA), code division multi-
ple access (CDMA), wideband code division multiple
access (WCDMA), single and multicarrier applica-
tions ranging from 100 MHz to 1.0 GHz.
Figure 1. AGRA5XU Package
Features
s
Continuous wave (CW) performance characterized
in frequency 865 MHz—895 MHz band @ 28 V:
— Output power: 5 W minimum @ P1dB.
— Power gain: 22 dB.
— Efficiency: 65% @ P1dB.
— Return loss: –10 dB.
s
CW performance characterized in frequency
921 MHz—960 MHz band @ 26 V:
— Output power: 5 W minimum @ P1dB.
— Power gain: 21 dB.
— Efficiency: 61% @ P1dB.
— Return loss: –10 dB.
s
High-reliability, gold-metalization process.
s
Low hot carrier injection (HCI) induced bias drift
over 20 years.
s
High gain, efficiency, and linearity.
s
Integrated ESD protection.
s
Device can withstand a 10:1 voltage standing wave
ratio (VSWR) with 5 W CW output power.
s
Large signal impedance parameters available.
Table 1. Thermal Characteristics
Table 2. Absolute Maximum Ratings*
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
Parameter
Sym
Value
Unit
Thermal Resistance,
Junction to Case:
AGRA5XU
R
θJC
8.5
°C/W
Parameter
Sym
Value
Unit
Drain-source Voltage
VDSS
65
Vdc
Gate-source Voltage
VGS
–0.5, 15
Vdc
Total Dissipation at TC = 25 °C:
AGRA5XU
PD
20.5
W
Derate Above 25
°C:
AGRA5XU
—
0.12
W/°C
Operating Junction Tempera-
ture
TJ
200
°C
Storage Temperature Range
TSTG –65, 150
°C
AGRA5XU
Minimum (V)
Class
HBM
500
1B
MM
50
A
CDM
1500
4
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