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參數(shù)資料
| 型號： | AGRB10E |
| 廠商： | LSI CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 100K |
| 代理商： | AGRB10E |
Preliminary Data Sheet
February 2004
AGRB10E
10 W, 1.0 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGRB10E (1.0 GHz to 2.7 GHz) is a broadband
general-purpose, high-voltage, gold-metalized, later-
ally diffused metal oxide semiconductor (LDMOS)
RF power transistor suitable for cellular, personal
communications system (PCS), digital communica-
tion system (DCS), international marine satellite
(INMARSAT), and universal mobile telecommunica-
tion system (UMTS), wireless local area network
(LAN) multichannel multipoint distribution system
(MMDS), base station power amplifier applications.
The AGRB10E is also suitable for global system for
mobile communications/enhanced data GSM envi-
ronment (GSM/EDGE), time-division multiple access
(TDMA), code-division multiple access (CDMA),
wideband code-division multiple access (W-CDMA),
single and multicarrier applications.
Figure 1. AGRB10E Package
Performance Features
1626 MHz to 1661 MHz (INMARSAT)
s
Continuous wave (CW) performance @ 28 V:
— Output power: 10 W minimum @ P1dB.
— Power gain: 16 dB.
— Efficiency: 61% @ P1dB.
— Return loss: –10 dB.
1805 MHz to 1880 MHz (DCS)
s
CW performance @ 28 V:
— Output power: 10 W minimum @ P1dB.
— Power gain: 16 dB.
— Efficiency: 60% @ P1dB.
— Return loss: –10 dB.
1930 MHz to 1990 MHz (PCS)
s
CW performance @ 28 V:
— Output power: 10 W minimum @ P1dB.
— Power gain: 15 dB.
— Efficiency: 58% @ P1dB.
— Return loss: –10 dB.
2110 MHz to 2170 MHz (UMTS)
s
CW performance @ 28 V:
— Output power: 10 W minimum @ P1dB.
— Power gain: 14 dB.
— Efficiency: 57% @ P1dB.
— Return loss: –10 dB.
2400 MHz to 2483 MHz (Wireless LAN)
s
CW performance @ TBD V:
— Output power: 10 W minimum @ P1dB.
— Power gain: 14 dB.
— Efficiency: TBD% @ P1dB.
— Return loss: –10 dB.
2500 MHz to 2700 MHz (MMDS)
s
CW performance @ TBD V:
— Output power: TBD W minimum @ P1dB.
— Power gain: TBD dB.
— Efficiency: TBD% @ P1dB.
— IM3: –TBD dBc, 10 W PEP.
— Return loss: –TBD dB.
Device Features
s
High-reliability, gold-metalization process.
s
Low hot carrier injection (HCI) induced bias drift
over 20 years.
s
High gain, efficiency, and linearity.
s
Integrated ESD protection.
s
Device can withstand a 10:1 voltage standing wave
ratio (VSWR) with 10 W CW output power.
s
Large signal impedance parameters available.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AGRF1000 | 功能描述:可復位保險絲 AGRF1000 RoHS:否 制造商:Bourns 電流額定值: 電阻:7.5 Ohms 最大直流電壓: 保持電流:0.1 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 跳閘電流:0.6 A 引線間隔: 系列:MF-PSHT 工作溫度范圍:- 40 C to + 125 C |
| AGRF1000-2 | 功能描述:可復位保險絲 AGRF1000-2 RoHS:否 制造商:Bourns 電流額定值: 電阻:7.5 Ohms 最大直流電壓: 保持電流:0.1 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 跳閘電流:0.6 A 引線間隔: 系列:MF-PSHT 工作溫度范圍:- 40 C to + 125 C |
| AGRF1000-AP | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:PolySwitch Resettable Devices Automotive Devices |
| AGRF1100 | 功能描述:可復位保險絲 AGRF1100 RoHS:否 制造商:Bourns 電流額定值: 電阻:7.5 Ohms 最大直流電壓: 保持電流:0.1 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 跳閘電流:0.6 A 引線間隔: 系列:MF-PSHT 工作溫度范圍:- 40 C to + 125 C |
| AGRF1100-2 | 功能描述:可復位保險絲 AGRF1100-2 RoHS:否 制造商:Bourns 電流額定值: 電阻:7.5 Ohms 最大直流電壓: 保持電流:0.1 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 跳閘電流:0.6 A 引線間隔: 系列:MF-PSHT 工作溫度范圍:- 40 C to + 125 C |
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