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參數(shù)資料
| 型號(hào)： | 934056621135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | CERAMIC, WITH PLASTIC CAP, SMD, SOT-632A, 12 PIN |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 410K |
| 代理商： | 934056621135 |
2002 Apr 9
6
Philips Semiconductors
Preliminary specification
Dual band UHF amplifier module for GSM900 and GSM1800
BGY282
-30
-20
-10
0
10
20
30
40
11.522.5
VC (V)
P
L
(dBm)
(1)
(2)
(3)
(3) (4)
(4)
(2)
Fig.2
Load power as a function of control voltage;
typical values.
ZS =ZL =50
; VS =3.5 V; PD =0 dBm;
Tmb =25
°C; δ =1 :8; tp = 575 s.
(1) = 880 MHz
(3) = 1710 MHz
(2) = 915 MHz
(4) = 1785 MHz
Fig.3
Efficiency as a function of load power;
typical values.
ZS =ZL =50
; VS =3.5 V; PD =0 dBm;
Tmb =25
°C; δ =1 :8; tp = 575 s.
0
10
20
30
40
50
20
25
30
35
40
PL (dBm)
η
(%)
880 MHz
1710 MHz
915 MHz
1785 MHz
Fig.4
Second harmonic as a function of load
power; typical values.
ZS =ZL =50 ; VS =3.5 V; PD =0 dBm;
Tmb =25 °C; δ =1 :8; tp = 575 s.
-80
-60
-40
-20
20
25
30
35
40
PL (dBm)
H
2
(dBc)
1710 MHz
915 MHz
1785 MHz
880 MHz
Fig.5
Third harmonic as a function of load power;
typical values.
ZS =ZL =50 ; VS =3.5 V; PD =0 dBm;
Tmb =25 °C; δ =1 :8; tp = 575 s.
-80
-70
-60
-50
-40
-30
-20
20
25
30
35
40
PL (dBm)
H
3
(dBc)
880 MHz
1710 MHz
915 MHz
1785 MHz
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