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參數(shù)資料
| 型號： | 934056621135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | CERAMIC, WITH PLASTIC CAP, SMD, SOT-632A, 12 PIN |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 410K |
| 代理商： | 934056621135 |
2002 Apr 9
5
Philips Semiconductors
Preliminary specification
Dual band UHF amplifier module for GSM900 and
GSM1800
BGY282
tr
carrier rise time
PL1 = 5 to 34 dBm; PL2 =0to 32 dBm;
time to settle within
0.5 dB of final PL
1.5
2
s
tf
carrier fall time
PL1 = 5 to 34 dBm; PL2 =0to 32 dBm;
time to settle within
0.5 dB of final PL
1.5
2
s
Pn
noise power GSM900
PL1
≤ 34 dBm; bandwidth = 100 kHz;
f = 925 MHz
71
dBm
PL1
≤ 34 dBm; bandwidth = 100 kHz;
f = 935 MHz
80
dBm
noise power GSM1800
PL2
≤ 32 dBm; bandwidth = 100 kHz;
f = 1805 MHz
76
dBm
AM/PM conversion
PD1,2 =
0.5to0.5 dBm;
PL1 = 5 to 34 dBm; PL2 =0to 32 dBm;
PL1,2 = constant during measurement
6
deg/dB
AM/AM conversion
PD1,2 = 4 %; f = 100 kHz;
PL1 = 5 to 34.7 dBm;
PL2 = 0 to 32.3 dBm
30
%
CG
conversion gain GSM900
PD1 =0dBm @ 915MHz;
PL1 =34dBm;
Pi1 =
50 dBm @ 905 MHz;
CG = P925
Pi1
25
dB
CG
conversion gain GSM1800
PD2 = 0 dBm @ 1785 MHz;
PL2 =32dBm;
Pi2 =
50 dBm @ 1765 MHz;
CG = P1805
Pi2
25
dB
3 dB control bandwidth
GSM900, GSM1800
PL1 = 5 to 34 dBm; PL2 = 0 to 32 dBm
0.5
MHz
power drop 4 slot burst
GSM900, GSM1800
VAPC = 2.2 V; difference PL with
δ = 1 : 8 and δ =4:8
0.4
dB
ruggedness
VS1,2 =5V; PD1 =0to 3 dBm;
PD2 = 0 to 5 dBm; PL1 =<35 dBm;
PL2 = <33 dBm; VSWR
≤6 : 1 through
all phases
no degradation
VS1,2 = 4.2 V; PD1 = 0 to 3 dBm;
PD2 = 0 to 5 dBm; PL1 =<35 dBm;
PL2 = <33 dBm; VSWR
≤10 : 1
through all phases
no degradation
VS1,2 = 4.2 V; PD1 = 0 to 3 dBm;
PD2 = 0 to 5 dBm PL1 = <34 dBm;
PL2 = <32 dBm; VSWR
≤6 : 1 through
all phases;
δ =4 :8
no degradation
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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