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參數(shù)資料
| 型號(hào)： | 934056621135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | CERAMIC, WITH PLASTIC CAP, SMD, SOT-632A, 12 PIN |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 410K |
| 代理商： | 934056621135 |
2002 Apr 9
3
Philips Semiconductors
Preliminary specification
Dual band UHF amplifier module for GSM900 and
GSM1800
BGY282
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note: PL is forward power, measured in a coupler.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VS1, VS2
DC supply voltage
VAPC =0; RFIN =off
7V
VAPC > 0.5 V; RFIN =on
5.5
V
VAPC
DC control voltage
3V
PD1, PD2
input drive power
10
dBm
PL1
load power 1 (GSM900)
36
dBm
PL1
load power 1 (GSM900)
δ = 4 : 8; VSWRout ≤ 2:1
35
dBm
PL2
load power 2 (GSM1800)
35
dBm
PL2
load power 2 (GSM1800)
δ = 4 : 8; VSWRout ≤ 2:1
34
dBm
PS1
total power from supply during pulse (GSM900)
δ =4 : 8
7.5
W
PS2
total power from supply during pulse (GSM1800)
δ =4 : 8
4.5
W
Tstg
storage temperature
40
+100
°C
Tmb
operating mounting base temperature
30
+100
°C
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