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參數(shù)資料
| 型號： | 934056621135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | CERAMIC, WITH PLASTIC CAP, SMD, SOT-632A, 12 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 410K |
| 代理商： | 934056621135 |
2002 Apr 9
2
Philips Semiconductors
Preliminary specification
Dual band UHF amplifier module for GSM900 and GSM1800
BGY282
FEATURES
Dual band GSM amplifier
3.5 V nominal supply voltage
33 dBm output power for GSM1800
35 dBm output power for GSM900
Easy output power control by DC voltage
Internal input and output matching
Easy band selection by DC voltage
Suited for GPRS class 12 (duty cycle 4 : 8).
APPLICATIONS
Digital cellular radio systems with Time Division Multiple
Access (TDMA) operation (GSM systems) in two
frequency bands: 880 to 915 MHz and
1710 to 1785 MHz.
DESCRIPTION
The BGY282 is a power amplifier module in a SOT632A
surface mounted ceramic package with a plastic cap.
The module consists of two separated line-ups, one for
GSM900 and one for GSM1800 with internal power
control, input and output matching.
PINNING - SOT632A
PIN
DESCRIPTION
1
RF input 1 (GSM900)
2VAPC
3, 6, 9, 12
Ground
4VS1 (GSM900)
5
RF output 1 (GSM900)
7
RF output 2 (GSM1800)
8VS2 (GSM1800)
10
Vband
11
RF input 2 (GSM1800)
5
12
4
3
7
6
12
11
Bottom view
MBL253
10
8
9
Fig.1 Simplified outline
QUICK REFERENCE DATA
RF performance at Tmb =25
°C.
MODE OF
OPERATION
f
(MHz)
VS
(V)
VAPC
(V)
PL
(dBm)
η
(%)
ZS, ZL
(
)
Pulsed;
δ =2:8
880 to 915
3.5
≤2.2
typ. 35
50
1710 to 1785
3.5
≤2.2
typ. 33
45
50
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