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參數(shù)資料
| 型號： | 934056621135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | CERAMIC, WITH PLASTIC CAP, SMD, SOT-632A, 12 PIN |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 410K |
| 代理商： | 934056621135 |
2002 Apr 9
4
Philips Semiconductors
Preliminary specification
Dual band UHF amplifier module for GSM900 and
GSM1800
BGY282
CHARACTERISTICS
ZS =ZL =50
; PD1,2 =0dBm; VS1 =VS2 = 3.5 V; VAPC ≤ 2.2 V; Tmb =25 °C; tp =575 s; δ =2 :8;
f = 880 to 915 MHz (GSM900); f = 1710 to 1785 MHz (GSM1800); measured on demoboard of fig 7; unless otherwise
specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Vband
band switch voltage
GSM1800 selected
0
0.7
V
GSM900 selected
1.7
5.5
V
Iband
band switch current
30
A
IL
leakage current
VAPC = 0.2 V; PD1,2 =0 mW
10
A
ICM1, ICM2 peak control current
2mA
PD1
input drive power (GSM900)
3
4dBm
PD2
input drive power (GSM1800)
32
5
dBm
PL1
load power GSM900
VAPC =2.2 V
34.7
35
dBm
VAPC = 2.2 V; VS1 = 3.1 V
34.2
34.5
dBm
VAPC = 2.2 V; VS1 = 3.1 V; Tmb =70
°C 33.7
34.0
dBm
PL2
load power GSM1800
VAPC =2.2 V
32.3
33
dBm
VAPC = 2.2 V; VS1 = 3.1 V
31.7
32.3
dBm
VAPC = 2.2 V; VS1 = 3.1 V; Tmb =70
°C 31.2
31.8
dBm
η1
efficiency GSM900
PL1 =34dBm
36
43
%
η1
efficiency GSM900
PL1 =35dBm
41
48
%
η2
efficiency GSM1800
PL2 = 31.5 dBm
33
39
%
η2
efficiency GSM1800
PL2 = 32.3 dBm
36
43
%
H2 to H8
harmonics GSM900
PL1 = 34.7 dBm
(H2 and H3 measured in production)
38
dBc
harmonics GSM1800
PL2 = 32.3 dBm
(H2 and H3 measured in production)
35
dBc
VSWRin
input VSWR of active device
VS1,2 = 3.1 to 4.4 V; PD1,2 =0dBm;
PL1 = 5 to 34.7 dBm;
PL2 = 0 to 32.3 dBm
3: 1
input VSWR of inactive
device
VS1,2 = 3.1 to 5.15 V; VAPC
≤ 0.5 V
8: 1
stability
VS1,2 =3to 5 V; PD1 =0 to3dBm;
PD2 = 0 to 5 dBm; PL1 =<35 dBm;
PL2 = <33 dBm; VSWR = 6 : 1 through
all phases
60
dBc
VS1,2 = 3.1 to 4.2 V; PD1 = 0 to 3 dBm;
PD2 = 0 to 5 dBm; PL1 =<34 dBm;
PL2 = <32 dBm; VSWR = 6 : 1 through
all phases;
δ =4 : 8
60
dBc
isolation
VAPC = 0.5 V; PD1 =3dBm;
PD2 =5dBm
36
dBm
second harmonic isolation
from GSM900 into GSM1800
PL1 = 34.7 dBm
20
dBm
maximum control slope
5dBm < PL1,2 <PLmax
120
200
dB/V
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